{"title":"Characterization of stress-voiding of Cu / Low-k vias attached to narrow lines","authors":"H.Y. Lin, S. Lee, A. Oates","doi":"10.1109/RELPHY.2008.4558989","DOIUrl":null,"url":null,"abstract":"We show that the mechanism of stress voiding in Cu/low-k vias is independent of width in the range 0.07 - 0.42 squarem. The resistance change associated with voiding shows saturation with stress time, implying that stress voiding is not a fundamental concern for continued feature size scaling. Stress voiding at narrow w is very sensitive to interconnect processing, and can give unexpected, large resistance increases with annealing.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
We show that the mechanism of stress voiding in Cu/low-k vias is independent of width in the range 0.07 - 0.42 squarem. The resistance change associated with voiding shows saturation with stress time, implying that stress voiding is not a fundamental concern for continued feature size scaling. Stress voiding at narrow w is very sensitive to interconnect processing, and can give unexpected, large resistance increases with annealing.
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