{"title":"Stabilization of temperature characteristics of micromirror for low-voltage driving using thin film torsion bar of tensile poly-Si","authors":"M. Sasaki, M. Fujishima, K. Hane, H. Miura","doi":"10.1109/OMEMS.2008.4607858","DOIUrl":null,"url":null,"abstract":"The micromirror with the tense thin film torsion bar can realize the low-voltage driving. The temperature characteristic is improved using polycrystalline (poly-) Si thin film taking advantage of the following features. The large tensile stress is obtained by the crystallization of amorphous (a-) Si film. The doping realizes the electrical connection. The poly-Si has the almost same coefficient of thermal expansion (CTE) with that of Si substrate.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2008.4607858","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The micromirror with the tense thin film torsion bar can realize the low-voltage driving. The temperature characteristic is improved using polycrystalline (poly-) Si thin film taking advantage of the following features. The large tensile stress is obtained by the crystallization of amorphous (a-) Si film. The doping realizes the electrical connection. The poly-Si has the almost same coefficient of thermal expansion (CTE) with that of Si substrate.