Ryosuke Okuyama, T. Kadono, Ayumi Masada, Akihiro Suzuki, Koji Kobayashi, S. Shigematsu, R. Hirose, Yoshihiro Koga, K. Kurita
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引用次数: 0
Abstract
In this study, the diffusion behavior of hydrogen in a CH4N-molecular-ion-implanted epitaxial wafer was investegated by reaction kinetic analysis. Two hydrogen-trapping sites, carbon aggregate and end of range (EOR) defects, were formed in the CH4N-implanted region. The C-H2 binding state was formed in the carbon aggregate region. On the other hand, the N-H binding state was formed in the EOR defect region. This result indicates that CH4N-molecular-ion-implanted epitaxial wafers contribute to the reduction in Dit at the SiO2/Si interface due to hydrogen desorption from the CH4N-implanted region during heat treatment in the device process.
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