Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10026977
F. Chalvin, Y. Miyamae, Yoshiaki Oku, K. Nakahara
Adoption of next generation semiconductors is still low, partly due to limited knowledge from the reliability point of view. To help solving this problem we introduce a way to track transistor degradation in real time using PCA analysis. By using this method, it is possible to detect when a transistor is no longer operating nominally from easily obtained voltage measurements.
{"title":"Principal Component Analysis Based GaN Transistor Live Health Monitoring","authors":"F. Chalvin, Y. Miyamae, Yoshiaki Oku, K. Nakahara","doi":"10.1109/ISSM55802.2022.10026977","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10026977","url":null,"abstract":"Adoption of next generation semiconductors is still low, partly due to limited knowledge from the reliability point of view. To help solving this problem we introduce a way to track transistor degradation in real time using PCA analysis. By using this method, it is possible to detect when a transistor is no longer operating nominally from easily obtained voltage measurements.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"329 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125443909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10027032
Kobayashi Dai, Kitsunezuka Masaki, Kataoka Yuki, Shi Jun
The plasma etching process for semiconductor fabrication is too complex to specify the causal structure of the mechanism especially of process variation. Therefore, prediction of etching performance is affected by correlation but not actual causal relationship to process variation. Such correlation is called pseudo correlation. In this research, we introduced the causal discovery technique to clarify the causality of the parameters in process. This method has been applied for experimental process data with consumed parts. The causal structure has been estimated reasonable and a model based on the structure have been achieved better prediction precision for process performance and parts consumption.
{"title":"Plasma Process Classification Using Causal Discovery Technique","authors":"Kobayashi Dai, Kitsunezuka Masaki, Kataoka Yuki, Shi Jun","doi":"10.1109/ISSM55802.2022.10027032","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027032","url":null,"abstract":"The plasma etching process for semiconductor fabrication is too complex to specify the causal structure of the mechanism especially of process variation. Therefore, prediction of etching performance is affected by correlation but not actual causal relationship to process variation. Such correlation is called pseudo correlation. In this research, we introduced the causal discovery technique to clarify the causality of the parameters in process. This method has been applied for experimental process data with consumed parts. The causal structure has been estimated reasonable and a model based on the structure have been achieved better prediction precision for process performance and parts consumption.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129721973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10026920
S. Takagi, Tatsuhiro Nakaegawa, S. Hsiao, M. Sekine
As a method to optimize the power frequency of dual-frequency plasma, we propose an optimization method that combines genetic algorithm and plasma simulation. A two-dimensional plasma simulation model of Ar plasma was constructed with a fluid model. Combining this simulation model with a genetic algorithm, plasma conditions with high plasma density and small variations in electron density were calculated. As a result, the optimum conditions were 175 to 210 MHz for the high-frequency generator and 0.5 to 4.0 MHz for the low-frequency generator.
{"title":"Optimization of RF Frequencies in Dual-frequency Capacitively Coupled Plasma Apparatus Using Genetic Algorithm (GA) and Plasma Simulation","authors":"S. Takagi, Tatsuhiro Nakaegawa, S. Hsiao, M. Sekine","doi":"10.1109/ISSM55802.2022.10026920","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10026920","url":null,"abstract":"As a method to optimize the power frequency of dual-frequency plasma, we propose an optimization method that combines genetic algorithm and plasma simulation. A two-dimensional plasma simulation model of Ar plasma was constructed with a fluid model. Combining this simulation model with a genetic algorithm, plasma conditions with high plasma density and small variations in electron density were calculated. As a result, the optimum conditions were 175 to 210 MHz for the high-frequency generator and 0.5 to 4.0 MHz for the low-frequency generator.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126885565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10026916
Seima Sakaguchi, Yasushi Arimura, T. Yamauchi, Yuichi Tokuyama, Tomoya Kawai, Hidetaka Eguchi, Hiroyuki Morinaga, H. Kawanaka, Tetsushi Wakabayashi
In semiconductor manufacturing, a pattern of chips with electrical failures in the wafer is usually used to identify failure factors. Wafers with similar in-plane trends are likely to have the same defect factors, and clustering techniques are often used to identify defect factors. It is, however, difficult for clustering approaches to make a cluster of infrequent unknown patterns. As a result, it will occur missing defect patterns. We discussed the method to detect infrequent unknown patterns and accurately classify frequent known defect patterns. We tried to make the proposed scheme with three strategies. As the first approach, VGG16 and SVM were used as the feature extractor and a classifier, respectively. The second approach is Convolutional Auto Encoder (CAE). We constructed CAEs for each known class, and the CAEs were trained to reconstruct the input images. When we take the above strategy, the constructed CAE cannot reconstruct the same image when the input image does not belong to the same class. It will be helpful to judge whether the given image belongs to the same class. The third approach uses the difference degree between the given image and typical images. The calculated value of the difference is used for distinguishing using thresholds. The experimental results show that the classification accuracy of known classes is 75.9%, the detection rate of unknown classes is 62.5%, and unknown clusters containing 35.7% of unknown classes are successfully created. To improve yield, it is essential to detect unknown defects at an early stage. If we can generate clusters that are mostly composed of unknown classes, it will be possible to recognize the occurrence of unknown defects. Since the proposed method was able to generate clusters in which unknown classes account for about 35%, we believe that it is sufficient to detect the occurrence of unknown defects.
{"title":"A Study on Detection Method Using 2-Class Classifiers for Defective Wafer Maps","authors":"Seima Sakaguchi, Yasushi Arimura, T. Yamauchi, Yuichi Tokuyama, Tomoya Kawai, Hidetaka Eguchi, Hiroyuki Morinaga, H. Kawanaka, Tetsushi Wakabayashi","doi":"10.1109/ISSM55802.2022.10026916","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10026916","url":null,"abstract":"In semiconductor manufacturing, a pattern of chips with electrical failures in the wafer is usually used to identify failure factors. Wafers with similar in-plane trends are likely to have the same defect factors, and clustering techniques are often used to identify defect factors. It is, however, difficult for clustering approaches to make a cluster of infrequent unknown patterns. As a result, it will occur missing defect patterns. We discussed the method to detect infrequent unknown patterns and accurately classify frequent known defect patterns. We tried to make the proposed scheme with three strategies. As the first approach, VGG16 and SVM were used as the feature extractor and a classifier, respectively. The second approach is Convolutional Auto Encoder (CAE). We constructed CAEs for each known class, and the CAEs were trained to reconstruct the input images. When we take the above strategy, the constructed CAE cannot reconstruct the same image when the input image does not belong to the same class. It will be helpful to judge whether the given image belongs to the same class. The third approach uses the difference degree between the given image and typical images. The calculated value of the difference is used for distinguishing using thresholds. The experimental results show that the classification accuracy of known classes is 75.9%, the detection rate of unknown classes is 62.5%, and unknown clusters containing 35.7% of unknown classes are successfully created. To improve yield, it is essential to detect unknown defects at an early stage. If we can generate clusters that are mostly composed of unknown classes, it will be possible to recognize the occurrence of unknown defects. Since the proposed method was able to generate clusters in which unknown classes account for about 35%, we believe that it is sufficient to detect the occurrence of unknown defects.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121294902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10027038
Kosuke Watahiki, Y. Midoh, Kazuya Okamoto
This paper focuses on advanced semiconductor photoresists and analyzes the patent data from the following four perspectives: relationship between semiconductor trends and resists; profit gains of the photoresist industry; advanced extreme ultraviolet lithography trends and sustainable development goals (SDGs); and patent quality and filing trends for photoresists. As a result, we obtain the trend of semiconductor photoresists accurately reflecting miniaturization and its relation to SDGs. In addition, a guideline for patent quality and information disclosure characteristics is obtained. Photoresist is a crucial component of the semiconductor industry in miniaturization, and patents are an effective application tool for the trend investigation.
{"title":"Technology Trends and Characteristics of Patent Information Disclosure in Advanced Semiconductor Photoresist","authors":"Kosuke Watahiki, Y. Midoh, Kazuya Okamoto","doi":"10.1109/ISSM55802.2022.10027038","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027038","url":null,"abstract":"This paper focuses on advanced semiconductor photoresists and analyzes the patent data from the following four perspectives: relationship between semiconductor trends and resists; profit gains of the photoresist industry; advanced extreme ultraviolet lithography trends and sustainable development goals (SDGs); and patent quality and filing trends for photoresists. As a result, we obtain the trend of semiconductor photoresists accurately reflecting miniaturization and its relation to SDGs. In addition, a guideline for patent quality and information disclosure characteristics is obtained. Photoresist is a crucial component of the semiconductor industry in miniaturization, and patents are an effective application tool for the trend investigation.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121683028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10027064
Yushi Sakai, Yoshinobu Shiba, Takafumi Inada, T. Goto, T. Suwa, Akihito Sutoh, T. Morimoto, Y. Shirai, S. Sugawa, Tetsu Oikawa, Aoi Hamaya, R. Kuroda
We are developing a 70-dB SNR 1,000 frame-per-second absorption imaging system, and it enables us to visualize gas concentration distribution and its dynamic behavior in a chamber for semiconductor manufacturing. In the steady-state gas flow condition, the spectrometry of NO2 gas shows a good linear relationship between the absorbance and the partial pressure above approximately 0.1 Pa with the system. Such low partial pressure measurement enables the visualization of beginning of jet out of $text{NO}_{2}/text{Ar}$ mixed gases from a nozzle. Furthermore, 1,000 frame-per-second imaging enables analyses of the gas velocity distribution and its width.
{"title":"In Situ Measurement and Analysis of Low Pressure Gas Concentration Distribution Using 70-dB SNR 1,000 Frame-Per-Second Absorption Imaging System","authors":"Yushi Sakai, Yoshinobu Shiba, Takafumi Inada, T. Goto, T. Suwa, Akihito Sutoh, T. Morimoto, Y. Shirai, S. Sugawa, Tetsu Oikawa, Aoi Hamaya, R. Kuroda","doi":"10.1109/ISSM55802.2022.10027064","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027064","url":null,"abstract":"We are developing a 70-dB SNR 1,000 frame-per-second absorption imaging system, and it enables us to visualize gas concentration distribution and its dynamic behavior in a chamber for semiconductor manufacturing. In the steady-state gas flow condition, the spectrometry of NO2 gas shows a good linear relationship between the absorbance and the partial pressure above approximately 0.1 Pa with the system. Such low partial pressure measurement enables the visualization of beginning of jet out of $text{NO}_{2}/text{Ar}$ mixed gases from a nozzle. Furthermore, 1,000 frame-per-second imaging enables analyses of the gas velocity distribution and its width.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133477548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10027110
Ryosuke Okuyama, T. Kadono, Ayumi Masada, Akihiro Suzuki, Koji Kobayashi, S. Shigematsu, R. Hirose, Yoshihiro Koga, K. Kurita
In this study, the diffusion behavior of hydrogen in a CH4N-molecular-ion-implanted epitaxial wafer was investegated by reaction kinetic analysis. Two hydrogen-trapping sites, carbon aggregate and end of range (EOR) defects, were formed in the CH4N-implanted region. The C-H2 binding state was formed in the carbon aggregate region. On the other hand, the N-H binding state was formed in the EOR defect region. This result indicates that CH4N-molecular-ion-implanted epitaxial wafers contribute to the reduction in Dit at the SiO2/Si interface due to hydrogen desorption from the CH4N-implanted region during heat treatment in the device process.
{"title":"Hydrogen diffusion behavior in CH4N-molecularion-implanted wafers for three-dimensional stacked CMOS image sensors","authors":"Ryosuke Okuyama, T. Kadono, Ayumi Masada, Akihiro Suzuki, Koji Kobayashi, S. Shigematsu, R. Hirose, Yoshihiro Koga, K. Kurita","doi":"10.1109/ISSM55802.2022.10027110","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027110","url":null,"abstract":"In this study, the diffusion behavior of hydrogen in a CH4N-molecular-ion-implanted epitaxial wafer was investegated by reaction kinetic analysis. Two hydrogen-trapping sites, carbon aggregate and end of range (EOR) defects, were formed in the CH4N-implanted region. The C-H2 binding state was formed in the carbon aggregate region. On the other hand, the N-H binding state was formed in the EOR defect region. This result indicates that CH4N-molecular-ion-implanted epitaxial wafers contribute to the reduction in Dit at the SiO2/Si interface due to hydrogen desorption from the CH4N-implanted region during heat treatment in the device process.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114621385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10027112
S. Hsiao, Y. Imai, Nikolay Britrun, T. Tsutsumi, K. Ishikawa, M. Sekine, M. Hori
Plasma diagnostics including electron density, temperature, neutral atomic densities of the $mathbf{CH}_{4}/mathbf{H}_{2}$ plasmas were performed in a capacitively-coupled reactor using surface-wave probe, Langmuir probe and vacuum ultraviolet absorption spectroscopy. The plasma density increased monotonically with varying $mathbf{H}_{2}$ content from 30 to 90 %. The electron temperature first decreased with $mathbf{H}_{2}$ up to 50 % and then increased at higher $mathbf{H}_{2}$ concentration. The HF concentration reached a maximum value at a $mathbf{H}_{2}$ of approximately 50 %, which is probably due to balance between H and F radicals from the plasma. Increasing the $mathbf{H}_{2}$ content resulted in a higher H concentration and a less cross-linked structure of the amorphous hydrofluorocarbon films, analyzed by using in situ Fourier transformation infrared spectroscopy.
{"title":"Plasma Diagnostics and Characteristics of Hydrofluorocarbon Films in Capacitively Coupled CF4/H2 Plasmas","authors":"S. Hsiao, Y. Imai, Nikolay Britrun, T. Tsutsumi, K. Ishikawa, M. Sekine, M. Hori","doi":"10.1109/ISSM55802.2022.10027112","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027112","url":null,"abstract":"Plasma diagnostics including electron density, temperature, neutral atomic densities of the $mathbf{CH}_{4}/mathbf{H}_{2}$ plasmas were performed in a capacitively-coupled reactor using surface-wave probe, Langmuir probe and vacuum ultraviolet absorption spectroscopy. The plasma density increased monotonically with varying $mathbf{H}_{2}$ content from 30 to 90 %. The electron temperature first decreased with $mathbf{H}_{2}$ up to 50 % and then increased at higher $mathbf{H}_{2}$ concentration. The HF concentration reached a maximum value at a $mathbf{H}_{2}$ of approximately 50 %, which is probably due to balance between H and F radicals from the plasma. Increasing the $mathbf{H}_{2}$ content resulted in a higher H concentration and a less cross-linked structure of the amorphous hydrofluorocarbon films, analyzed by using in situ Fourier transformation infrared spectroscopy.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116047885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10026968
Ye. Yerlanuly, M. Gabdullin, R. Nemkayeva, R. Zhumadilov, Balaussa Ye. Alpysbayeva, T. Ramazanov
This work presents experimental results on the synthesis of carbon nanowalls (CNWs) with predefined morphology on the surface of nanoporous alumina membrane using method of radio-frequency plasma-enhanced chemical vapor deposition. Obtained samples were characterized by the methods of scanning electron microscopy and Raman spectroscopy. From the microstructure analyses of CNWs, it has been observed that there is a time dependence of the reproducibility of membrane morphology by CNWs. At the early stage of CNWs growth, CNWs grow preferably around the edges of nanopores and continue to grow vertically with time. Nanopores size begin to shrink drastically and pores are completely covered by secondary flake-like CNWs after 25 minutes of growth.
{"title":"Obtaining of Carbon Nanowalls with A Specified Morphology","authors":"Ye. Yerlanuly, M. Gabdullin, R. Nemkayeva, R. Zhumadilov, Balaussa Ye. Alpysbayeva, T. Ramazanov","doi":"10.1109/ISSM55802.2022.10026968","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10026968","url":null,"abstract":"This work presents experimental results on the synthesis of carbon nanowalls (CNWs) with predefined morphology on the surface of nanoporous alumina membrane using method of radio-frequency plasma-enhanced chemical vapor deposition. Obtained samples were characterized by the methods of scanning electron microscopy and Raman spectroscopy. From the microstructure analyses of CNWs, it has been observed that there is a time dependence of the reproducibility of membrane morphology by CNWs. At the early stage of CNWs growth, CNWs grow preferably around the edges of nanopores and continue to grow vertically with time. Nanopores size begin to shrink drastically and pores are completely covered by secondary flake-like CNWs after 25 minutes of growth.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123995241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-12DOI: 10.1109/ISSM55802.2022.10027161
S. Levi, R. L. Tiec, C. Dupré, C. Vannuffel, T. Dewolf, S. Garcia, K. Millard, B. Meynard, Y. Lee, M. Colard, H. A. Dujaili, J. Faugier-Tovar, Shinsuke Mizuno
Photonic devices manufactured on core materials (by example Si or SiN) wafers, using a semiconductor fabrication technique, was demonstrated to increase data transmission speed, consume less power, and generate less heat than conventional electronic circuits. Light propagation loss strongly dependents on the Waveguide edge roughness. To reduce roughness, three patterning methods are evaluated, dry vs wet lithography, OPC (Optical proximity correction) and Hydrogen anneal on two types of waveguides, RIB and STRIP, fabricated on SOI wafer. In this paper, we demonstrate innovative methods to measure edge roughness of straight and curved WGs with a CDSEM. CD roughness measurements are correlated with light propagation loss.
{"title":"Characterization of Light propagation loss in Photonics devices using High-Resolution CDSEM metrology","authors":"S. Levi, R. L. Tiec, C. Dupré, C. Vannuffel, T. Dewolf, S. Garcia, K. Millard, B. Meynard, Y. Lee, M. Colard, H. A. Dujaili, J. Faugier-Tovar, Shinsuke Mizuno","doi":"10.1109/ISSM55802.2022.10027161","DOIUrl":"https://doi.org/10.1109/ISSM55802.2022.10027161","url":null,"abstract":"Photonic devices manufactured on core materials (by example Si or SiN) wafers, using a semiconductor fabrication technique, was demonstrated to increase data transmission speed, consume less power, and generate less heat than conventional electronic circuits. Light propagation loss strongly dependents on the Waveguide edge roughness. To reduce roughness, three patterning methods are evaluated, dry vs wet lithography, OPC (Optical proximity correction) and Hydrogen anneal on two types of waveguides, RIB and STRIP, fabricated on SOI wafer. In this paper, we demonstrate innovative methods to measure edge roughness of straight and curved WGs with a CDSEM. CD roughness measurements are correlated with light propagation loss.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127875800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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