L. Benea, T. Cerba, M. Bawedin, C. Delacour, S. Cristoloveanu, I. Ionica
{"title":"Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration","authors":"L. Benea, T. Cerba, M. Bawedin, C. Delacour, S. Cristoloveanu, I. Ionica","doi":"10.1109/ULIS.2018.8354754","DOIUrl":null,"url":null,"abstract":"The effect of probe-induced nanoindentation on the electrical transport in Ψ-MOSFET is presented. Systematic measurements were performed in order to evaluate the dependence of the drain current on the probe pressure in different operating regimes. This enabled to investigate the existence of the metallic Si-II crystallographic form of silicon, which emerges at high pressures and shows a significant impact in the accumulation regime.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The effect of probe-induced nanoindentation on the electrical transport in Ψ-MOSFET is presented. Systematic measurements were performed in order to evaluate the dependence of the drain current on the probe pressure in different operating regimes. This enabled to investigate the existence of the metallic Si-II crystallographic form of silicon, which emerges at high pressures and shows a significant impact in the accumulation regime.
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