CMOS photosensors for LIDAR

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC) Pub Date : 2018-10-01 DOI:10.1109/NORCHIP.2018.8573471

T. M. Khanshan, K. G. Kjeldgard, E. Ulvestad, D. Wisland, T. Lande

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Abstract

In this paper photosensors for CMOS LIDAR intended for non-invasive biosensing are presented. Adequate depth resolution requires high-speed sampling and high-speed photosensors, hard to make in standard CMOS. In this paper CMOS photodiodes are evaluated with respect to speed and sensitivity designed for use in a single-chip LIDAR system. Diodes dimensions are quite small $(5 \mu m \times 5 \mu m)$ suited for larger arrays. Simple assessment circuits are used in combination with high-speed optical instrumentation for characterization of different photosensors structures fabricated in standard $90 nm$ CMOS.

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用于激光雷达的CMOS光传感器

本文介绍了用于非侵入式生物传感的CMOS激光雷达光传感器。足够的深度分辨率需要高速采样和高速光传感器，这在标准的CMOS中很难实现。本文对设计用于单芯片激光雷达系统的CMOS光电二极管在速度和灵敏度方面进行了评估。二极管尺寸非常小$(5 \ μ m \乘以5 \ μ m)$适合较大的阵列。简单的评估电路与高速光学仪器相结合，用于表征用标准$90 nm$ CMOS制造的不同光传感器结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)

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