A Design Approach for SiGe Low-Noise Amplifiers Using Wideband Input Matching

Zhe Chen, Hao Gao, P. Baltus
{"title":"A Design Approach for SiGe Low-Noise Amplifiers Using Wideband Input Matching","authors":"Zhe Chen, Hao Gao, P. Baltus","doi":"10.1109/NORCHIP.2018.8573488","DOIUrl":null,"url":null,"abstract":"This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20–40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.","PeriodicalId":152077,"journal":{"name":"2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHIP.2018.8573488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with inductive degeneration, the dual-LC tank employs two resonant tanks so as to achieve wideband input power matching and noise matching simultaneously. Following the design procedure described in the paper, a 20–40 GHz low noise amplifier is designed and the simulation results are provided to verify the proposed approach.
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基于宽带输入匹配的SiGe低噪声放大器设计方法
本文研究了双极硅锗集成电路技术中宽带低噪声放大器的可行性。对三种不同的设计技术进行了比较,并对其中最具发展前景的一种进行了详细的分析和设计实例检验。我们提出了一种基于lc -阶梯结构作为输入匹配网络的设计方法。双lc槽与感应退化级联结构放大器配合使用,采用两个谐振槽,同时实现宽带输入功率匹配和噪声匹配。按照本文的设计步骤,设计了一个20-40 GHz的低噪声放大器,并给出了仿真结果来验证所提出的方法。
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