A 57.1–59GHz CMOS fractional-N frequency synthesizer using quantization noise shifting technique

Chao-Ching Hung, Chihun Lee, Lan-chou Cho, Shen-Iuan Liu
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Abstract

In this paper, a 57.1-59 GHz fractional-N frequency synthesizer has been fabricated in 90 nm CMOS technology. A magnetic-coupled VCO achieves the high oscillation frequency and low phase noise. A harmonic-locked PD and a multi-modulus prescaler are adopted to double the sampling frequency of a second-order delta-sigma modulator. Theoretically, the quantization noise is improved by 12 dB with the same PLL bandwidth. It consumes 89 mW from a 1.2 V analog supply with output buffers and 16 mW from a 1.2 V digital supply. The chip occupies 0.86 times1.28 mm2 and the measured phase noise at 58.359375 GHz with the offset frequency of 2 MHz is -95.1 dBc/Hz.
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采用量化噪声移位技术的57.1-59GHz CMOS分数n频率合成器
本文采用90 nm CMOS工艺,制作了57.1-59 GHz分数n频率合成器。磁耦合压控振荡器实现了高振荡频率和低相位噪声。采用锁谐PD和多模预分频器将二阶δ - σ调制器的采样频率提高一倍。理论上,在相同锁相环带宽的情况下,量化噪声提高了12 dB。它从带输出缓冲的1.2 V模拟电源消耗89兆瓦,从1.2 V数字电源消耗16兆瓦。该芯片占地0.86乘以1.28 mm2,在58.359375 GHz处测量到的相位噪声为-95.1 dBc/Hz,偏移频率为2mhz。
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