{"title":"Reemergence of the surface-potential-based compact MOSFET models","authors":"G. Gildenblat, X. Cai, T. Chen, X. Gu, H. Wang","doi":"10.1109/IEDM.2003.1269415","DOIUrl":null,"url":null,"abstract":"This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This paper addresses current issues in compact MOSFET modeling, provides an overview and some essential details of SP (a new compact MOSFET model developed at Penn State), and presents original results concerning new applications of the symmetric linearization method and streamlined surface potential (/spl phi//sub s/) approximation.
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