Low-field charge injection in SIMOX buried oxides

Abstract

Electrically active defects of the buried oxide in SIMOX (separation by implantation of oxygen) material have received relatively little attention. In an effort to gain further understanding of these defects, the authors investigated the effect of constant bias stressing on SIMOX buried oxides. The results show that damage from electron injection can be significant for electric fields of only 2 MV/cm. For low implant dose material, enhanced electron injection from the film/buried oxide interface is seen. For this material, there is also a net negative trapped charge and generation of interface traps at both buried oxide interfaces. For standard dose material, the net trapped charge is positive, and is only seen at the substrate/buried oxide interface.<>