Inclusion of substrate effects in the flyback method for BJT resistance characterisation

D. MacSweeney, K. McCarthy, A. Mathewson, J. A. Power, S. C. Kelly
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引用次数: 4

Abstract

In this paper, the effect of the substrate interaction is examined for the R/sub E/ flyback method which is commonly used to measure the emitter resistance of BJT devices. By considering the structure to be a combination of two devices, the measurement conditions can be understood better for different substrate configurations, giving improved confidence in the method.
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在BJT电阻表征的反激法中包含衬底效应
本文研究了基片相互作用对测量BJT器件发射极电阻的影响,该方法通常用于测量BJT器件的发射极电阻。通过将结构考虑为两个器件的组合,可以更好地理解不同衬底配置的测量条件,从而提高了对该方法的信心。
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A compact SOI model for fully-depleted and partially-depleted 0.25 /spl mu/m SIMOX devices Inclusion of substrate effects in the flyback method for BJT resistance characterisation Sheet and line resistance of patterned SOI surface film CD reference materials as a function of substrate bias Analysis of current flow in mono-crystalline electrical linewidth structures A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors
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