A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors

Abstract

Direct extraction of ten core SPICE model parameters for double polysilicon bipolar junction transistors (BJTs) was performed using a new test structure. The test structure was basically identical to a real BJT, but without the intrinsic base. Hence, the extrinsic parasitics of the test structure were identical to the BJT. From the test structure small-signal model, all extrinsic model parameters were directly extracted from the measured scattering parameters over the frequency range of 1 to 18 GHz. The values of the extracted parameters were in good agreement compared to those obtained using other conventional methods.