Reconfigured multichip-on-wafer (mCoW) Cu/oxide hybrid bonding technology for ultra-high density 3D integration using recessed oxide, thin glue adhesive, and thin metal capping layers

K. Lee, C. Nagai, A. Nakamura, Hiroki Aizawa, J. Bea, M. Koyanagi, H. Hashiguchi, T. Fukushima, Tanaka Tanaka
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引用次数: 5

Abstract

High yield reconfigured multichip-on-wafer (mCoW) Cu/oxide hybrid bonding technology is proposed for ultra-high density 2.5D/3D integration applications. New mCoW hybrid bonding technology use shallow-recess oxide structure, electro-less plated capping layers, and thin glue adhesive layer below 1um to avoid the issues of current standard CoW bonding technology. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around 1um using chip self-assembly technology and thermal-compression bonded by in batch. In the TEG chip, totally 684,000 electrode daisy chain comprising of 3μm diameter/6um pitch tiny Cu electrodes are well intact joined by new reconfigured mCoW hybrid bonding technology.
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重新配置的多晶片上(mCoW)铜/氧化物混合键合技术,采用嵌入式氧化物、薄胶粘合剂和薄金属覆盖层,实现超高密度3D集成
针对超高密度2.5D/3D集成应用,提出了高良率重构多片单片(mCoW) Cu/氧化物杂化键合技术。新型mCoW混合键合技术采用浅凹槽氧化物结构,化学镀盖层,1um以下的薄胶粘接层,避免了目前标准CoW键合技术存在的问题。采用芯片自组装技术和批量热压缩粘接技术,同时对准7mm × 23mm尺寸的多个TEG模具,精度在1um左右。在TEG芯片中,由直径3μm /间距6 μm的微小Cu电极组成的68.4万个电极菊花链通过重新配置的mCoW混合键合技术完整地连接在一起。
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