{"title":"Understanding carrier transport in the ultimate physical scaling limit of MOSFETs","authors":"H. Tsuchiya","doi":"10.1109/IMFEDK.2014.6867045","DOIUrl":null,"url":null,"abstract":"We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.
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