Achieving Wideband sub-1dB Noise Figure and High Gain with MOSFETs if Input Power Matching is not Required

E. Klumperink, Qiaohui Zhang, G. Wienk, R. Witvers, J. B. D. Vaate, B. Woestenburg, B. Nauta
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引用次数: 24

Abstract

A 0.18 mum CMOS low noise amplifier (LNA) achieves sub-1 dB noise figure over more than an octave of bandwidth without external noise matching components. It is designed for a future radio telescope, requiring millions of cheap LNAs mounted directly on phased array antenna elements. The short distance between antenna and LNA and low frequency below 2 GHz allows for using an LNA with reflective input impedance, increasing the gain with 6 dB. Without any matching network, very low noise figure is achieved over a wide bandwidth. At 90 mW power, sub-1 dB Noise is achieved for 50 Omega source impedance over a 0.8-1.8 GHz band without external coils, and S21>20 dB, OIP2>25 dBm and OIP3>15 dBm. Preliminary results with 150 Omega source impedance show noise temperatures as low as 25 K around 900 MHz.
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在不需要输入功率匹配的情况下,利用mosfet实现宽带sub-1dB噪声系数和高增益
0.18 μ m CMOS低噪声放大器(LNA)在没有外部噪声匹配元件的情况下,在超过一个倍频的带宽上实现低于1 dB的噪声值。它是为未来的射电望远镜设计的,需要数百万个廉价的lna直接安装在相控阵天线元件上。由于天线与LNA之间的距离较短,且频率低于2 GHz,因此可以使用具有反射输入阻抗的LNA,从而增加6 dB的增益。在没有任何匹配网络的情况下,可以在很宽的带宽上实现很低的噪声系数。在功率为90 mW时,在0.8-1.8 GHz频带上,在无外部线圈的情况下,源阻抗为50 ω,噪声低于1 dB, S21>20 dB, OIP2>25 dBm, OIP3>15 dBm。150 ω源阻抗的初步结果显示噪声温度在900 MHz左右低至25 K。
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