S. Voldman, P. Juliano, J. Schmidt, R. Johnson, L. Lanzerotti, Alvin J. Joseph, C. Brennan, James S. Dunn, D. Harame, Elyse Rosenbaum, B. Meyerson
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引用次数: 33
Abstract
This paper investigates high-current and electrostatic discharge (ESD) phenomena in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in base-collector, base-emitter, collector-emitter and collector-to-substrate configurations. Transmission line pulse (TLP) and ESD human body model (HBM) wafer-level reliability testing of SiGe HBTs is completed for high-current characterization and evaluation of the ESD robustness of a BiCMOS SiGe technology.
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