T. Suemasu, M. Takauji, T. Sunohara, C. Li, F. Hasegawa
{"title":"Growth and characterization of Si-based light-emitting diode with /spl beta/-FeSi/sub 2/ active region by molecular beam epitaxy","authors":"T. Suemasu, M. Takauji, T. Sunohara, C. Li, F. Hasegawa","doi":"10.1109/GROUP4.2004.1416635","DOIUrl":null,"url":null,"abstract":"Si p-n junction light-emitting diodes with /spl beta/-FeSi/sub 2/ particles and with a /spl beta/-FeSi/sub 2/ continuous film active region were grown on Si(001) and Si(111) substrates, respectively, by molecular beam epitaxy and the electroluminescence properties were investigated.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Si p-n junction light-emitting diodes with /spl beta/-FeSi/sub 2/ particles and with a /spl beta/-FeSi/sub 2/ continuous film active region were grown on Si(001) and Si(111) substrates, respectively, by molecular beam epitaxy and the electroluminescence properties were investigated.
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