Y. Okuno, M. Okabe, T. Arakawa, I. Tomioka, T. Ohno, T. Noda, Y. Kuramitsu
{"title":"0.8 μm 1.4 MTr. CMOS SOG based on column macro-cell","authors":"Y. Okuno, M. Okabe, T. Arakawa, I. Tomioka, T. Ohno, T. Noda, Y. Kuramitsu","doi":"10.1109/CICC.1989.56716","DOIUrl":null,"url":null,"abstract":"Column macro-cell architecture has been verified to be advantageous for increasing silicon utilization in experimental circuit layouts. As an application, a 64-b multiplier with 32-kb RAM and 65-kb ROM using a 1.4-M transistor sea of gates (SOG) has been developed, using 0.8-μm two-layer-metal CMOS. Gate density of 1.5 kg/mm2 and bit densities of 1.9 kb/mm2 for RAM and 6.3/mm2 for ROM have been achieved","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1989.56716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Column macro-cell architecture has been verified to be advantageous for increasing silicon utilization in experimental circuit layouts. As an application, a 64-b multiplier with 32-kb RAM and 65-kb ROM using a 1.4-M transistor sea of gates (SOG) has been developed, using 0.8-μm two-layer-metal CMOS. Gate density of 1.5 kg/mm2 and bit densities of 1.9 kb/mm2 for RAM and 6.3/mm2 for ROM have been achieved