{"title":"Resonant Tunneling Diode Based Photodetectors Design Rules for Telecom Applications","authors":"Saif Alomari, J. Figueiredo","doi":"10.1109/ICTP53732.2021.9744181","DOIUrl":null,"url":null,"abstract":"In this paper, we propose physical rules for designing resonant tunneling diode-based photodetectors. These rules are employed to design two devices based on the InGaAs/InP material system, which can theoretically reach speeds of 10 GHz. The calculations are supported by simulations using Silvaco ATLAS software.","PeriodicalId":328336,"journal":{"name":"2021 IEEE International Conference on Telecommunications and Photonics (ICTP)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Telecommunications and Photonics (ICTP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTP53732.2021.9744181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we propose physical rules for designing resonant tunneling diode-based photodetectors. These rules are employed to design two devices based on the InGaAs/InP material system, which can theoretically reach speeds of 10 GHz. The calculations are supported by simulations using Silvaco ATLAS software.
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