{"title":"The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs","authors":"R. Yang, J.S. Luo, J. Tu, R. Zhang","doi":"10.1109/IWJT.2004.1306845","DOIUrl":null,"url":null,"abstract":"Sub-threshold characteristics of strained SiGe PMOSFETs and Si PMOSFETs are theoretically analyzed with simplified but effective models, then are simulated and compared by using a two-dimensional simulator. Sub-threshold current and sub-threshold slope varying with vertical structure parameters are also studied. Simulation results are well consistent with the theoretical analysis, and show that the sub-threshold characteristics of strained SiGe PMOSFETs, which are worse than those of Si PMOSFETs, are sensitive to vertical structure parameters and worth carefully paying attention to.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Sub-threshold characteristics of strained SiGe PMOSFETs and Si PMOSFETs are theoretically analyzed with simplified but effective models, then are simulated and compared by using a two-dimensional simulator. Sub-threshold current and sub-threshold slope varying with vertical structure parameters are also studied. Simulation results are well consistent with the theoretical analysis, and show that the sub-threshold characteristics of strained SiGe PMOSFETs, which are worse than those of Si PMOSFETs, are sensitive to vertical structure parameters and worth carefully paying attention to.
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