{"title":"Multi-band Monte Carlo method using anisotropic-analytical multi-band model","authors":"M. Yamaji, K. Taniguchi, C. Hamaguchi","doi":"10.1109/SISPAD.1996.865275","DOIUrl":null,"url":null,"abstract":"Fabrication of Si MOSFET's with a 0.1-/spl mu/m order gate length has now started. The Monte Carlo (MC) method is recognised as the most powerful simulation technique for devices of this size. In this paper we propose a new anisotropic-analytical band model, and we develop a multi-band MC simulator using this model to investigate hot carrier transport in real space.","PeriodicalId":341161,"journal":{"name":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.1996.865275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Fabrication of Si MOSFET's with a 0.1-/spl mu/m order gate length has now started. The Monte Carlo (MC) method is recognised as the most powerful simulation technique for devices of this size. In this paper we propose a new anisotropic-analytical band model, and we develop a multi-band MC simulator using this model to investigate hot carrier transport in real space.
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