An implicit coupling scheme for the use of long time steps in stable self-consistent particle simulation of semiconductor devices with high doping levels

D. Liebig, A. Abou Elnour, K. Schunemann
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引用次数: 1

Abstract

The aim of the present work is to introduce an efficient iterative implicit coupling scheme for the stochastic particle simulation of semiconductor devices which allows to use long time-steps between successive solutions of the Poisson equation even if the maximum plasma frequency is very high, and which easily can incorporate particle-mesh coupling schemes which guarantee weak self-forces and to first order can also incorporate exact integration of the equations of motion across cell-boundaries of the Poisson-grid. The new method can directly improve the computational efficiency of many particle simulators (standard MC, full-band MC, CA-methods) by an order of magnitude if devices with high free carrier densities are under investigation.
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在高掺杂水平半导体器件的稳定自一致粒子模拟中使用长时间步长的隐式耦合方案
本工作的目的是为半导体器件的随机粒子模拟引入一种有效的迭代隐式耦合方案,该方案允许在泊松方程的连续解之间使用长时间步长,即使最大等离子体频率非常高。它可以很容易地结合粒子网格耦合方案,保证弱自力,并且在一阶上也可以结合跨泊松网格单元边界的运动方程的精确积分。如果研究具有高自由载流子密度的器件,该方法可以直接将许多粒子模拟器(标准MC、全频带MC、ca方法)的计算效率提高一个数量级。
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