Yin Wang, F. Zahid, Y. Zhu, Lei Liu, Jian Wang, Hong Guo
{"title":"Band offsets of AlxGa1−xAs/GaAs heterojunction from atomistic first principles","authors":"Yin Wang, F. Zahid, Y. Zhu, Lei Liu, Jian Wang, Hong Guo","doi":"10.1109/EDSSC.2013.6628136","DOIUrl":null,"url":null,"abstract":"The properties of III-V compound semiconductors and their heterojunctions have been relentlessly investigated due to their wide-ranging applications in electronic and optoelectronic technologies. One of most important electronic property of heterojunctions is the band offset which describes the relative alignment of the electronic bands across the junction interface. Accurate determination of band offsets is critical for understanding quantum transport properties of the heterojuncton. For many III-V materials systems, the band offset has been carefully measured experimentally.[1]","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The properties of III-V compound semiconductors and their heterojunctions have been relentlessly investigated due to their wide-ranging applications in electronic and optoelectronic technologies. One of most important electronic property of heterojunctions is the band offset which describes the relative alignment of the electronic bands across the junction interface. Accurate determination of band offsets is critical for understanding quantum transport properties of the heterojuncton. For many III-V materials systems, the band offset has been carefully measured experimentally.[1]
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