Light-emitting SiGe heterostructures with self-assembled islands for optical interconnection in the wavelength range of 1.3–2.1 μm

A. Novikov, A. Tonkikh, D. Yurasov, A. Antonov, N. Baydakova, K. Kudryavtsev, M. Shaleev, D. Lobanov, Z. Krasilnik
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Abstract

The paper is devoted to the study of formation and luminescent properties of light-emitting structures with Ge(Si) self-assembled islands grown on Si(001), SOI and relaxed SiGe/Si(001) buffers.
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波长范围为1.3 ~ 2.1 μm的具有自组装岛的发光SiGe异质结构
本文研究了生长在Si(001)、SOI和松弛的SiGe/Si(001)缓冲层上的Ge(Si)自组装岛发光结构的形成和发光特性。
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Design of polarization-independent optical isolator with amorphous silicon waveguide High-efficiency subwavelength-engineered surface grating couplers in SOI and DSOI Quantum dot lasers on silicon Process induced tensile strain of Ge on Si nanopillars by ICP-PECVD SiN stressor layers Performance optimization for switch matrices based on carrier-injection-driven Mach-Zehnder switch cells
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