Digital delay locked loop with open-loop digital duty cycle corrector for 1.2Gb/s/pin double data rate SDRAM

C. Jeong, C. Yoo, Jae-Jin Lee, J. Kih
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引用次数: 17

Abstract

A digital delay locked loop (DLL) for 1.2 Gb/s/pin double data rate (DDR) SDRAM is described, which incorporates duty cycle correction (DCC). The DCC locking information is also stored as a digital code for fast wake-up from power-down mode and DCC control is done in an open-loop, enabling fast locking of the DCC loop with minimum additional power consumption. The DLL, implemented in a 0.35 /spl mu/m CMOS technology, provides an output clock with 64 ps peak-to-peak jitter and the accuracy of the DCC is /spl plusmn/0.7% for /spl plusmn/10% input duty error from 250 MHz to 600 MHz clock frequency. The digital DLL, excluding I/O buffers, dissipates 10 mW from a 2.5 V power supply.
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带开环数字占空比校正器的数字延迟锁环,适用于1.2Gb/s/引脚双数据速率SDRAM
描述了一种用于1.2 Gb/s/引脚双数据速率(DDR) SDRAM的数字延迟锁相环(DLL),它包含了占空比校正(DCC)。DCC锁定信息也存储为数字代码,用于从断电模式快速唤醒,DCC控制在开环中完成,以最小的额外功耗实现DCC环路的快速锁定。DLL采用0.35 /spl mu/m CMOS技术实现,提供64 ps峰间抖动输出时钟,在250 MHz至600 MHz时钟频率范围内,DCC的精度为/spl plusmn/0.7%,输入占空误差为/spl plusmn/10%。数字DLL,不包括I/O缓冲器,从2.5 V电源消耗10 mW。
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Charge recycling sense amplifier based logic: securing low power security ICs against DPA [differential power analysis] 1.5 GHz OPAMP in 120nm digital CMOS Digital delay locked loop with open-loop digital duty cycle corrector for 1.2Gb/s/pin double data rate SDRAM A 14-V high speed driver in 5-V-only 0.35-/spl mu/m standard CMOS A low-swing single-ended L1 cache bus technique for sub-90nm technologies
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