{"title":"A 14-V high speed driver in 5-V-only 0.35-/spl mu/m standard CMOS","authors":"D. Killat, O. Salzmann, A. Baumgaertner","doi":"10.1109/ESSCIR.2004.1356640","DOIUrl":null,"url":null,"abstract":"A high-voltage and high-speed driver, using only 5-V and 3.3-V technology features in 0.35-/spl mu/m standard CMOS, is presented. The pull-up function is performed by cascaded 5-V PMOS; a 5-V CMOS compatible gate-shifted LDD NMOS performs the pull-down. The maximum continuous operating voltage is 14 V. The driver is suitable for inductive and capacitive loads. An external MOSFET with 1 nF gate capacitance is fully switched in 200 ns, the peak current that the driver delivers is more than 100 mA. The area of the driver including pad is 0.18 mm/sup 2/. The paper discusses characteristics and lifetime of the driver transistors, design trade-offs, and presents simulations, measurement results and statistical data.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A high-voltage and high-speed driver, using only 5-V and 3.3-V technology features in 0.35-/spl mu/m standard CMOS, is presented. The pull-up function is performed by cascaded 5-V PMOS; a 5-V CMOS compatible gate-shifted LDD NMOS performs the pull-down. The maximum continuous operating voltage is 14 V. The driver is suitable for inductive and capacitive loads. An external MOSFET with 1 nF gate capacitance is fully switched in 200 ns, the peak current that the driver delivers is more than 100 mA. The area of the driver including pad is 0.18 mm/sup 2/. The paper discusses characteristics and lifetime of the driver transistors, design trade-offs, and presents simulations, measurement results and statistical data.
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