The Path Forward for GaN Power Devices

Abstract

GaN power devices, discrete transistors and integrated circuits, have been in production for over 10 years and have made significant inroads in many applications that benefit from the smaller size and the faster switching speed. These devices are several times smaller than their aging silicon MOSFET ancestors and, largely because of this size advantage, have also become comparatively less costly to produce. In this paper we will discuss cost, power density, and integration challenges facing GaN producers. We will attempt to quantify the impact and set a reasonable timetable for implementation.