Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360254
O. Karimzada, Takayuki Uchida, T. Masuda, Y. Mori, A. Shima, G. Donato
Recent increased demand in high power density and high-efficiency converters for EV charging makes wide bandgap semiconductors, particularly silicon carbide (SiC), excellent candidates of choice to meet this demand. This paper presents a step-down DC-DC converter using trench SiC MOS made by HITACHI for EV ultra-fast charging. It compares the efficiency and performance of the converter with IGBT and other SiC transistors. In all cases, it shows the clear advantage of the trench etched MOS over alternatives.
{"title":"Design of a DC-DC Converter using SiC Trench MOSFETs for EV Fast Chargers","authors":"O. Karimzada, Takayuki Uchida, T. Masuda, Y. Mori, A. Shima, G. Donato","doi":"10.1109/WiPDAAsia49671.2020.9360254","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360254","url":null,"abstract":"Recent increased demand in high power density and high-efficiency converters for EV charging makes wide bandgap semiconductors, particularly silicon carbide (SiC), excellent candidates of choice to meet this demand. This paper presents a step-down DC-DC converter using trench SiC MOS made by HITACHI for EV ultra-fast charging. It compares the efficiency and performance of the converter with IGBT and other SiC transistors. In all cases, it shows the clear advantage of the trench etched MOS over alternatives.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122807197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360251
Kyohei Shimozato, S. Bian, Takashi Sato
A compact model for SiC MOSFETs valid for wide temperature range is proposed. The model equations that represent temperature dependence of five model parameters are determined according to device physics. Unlike existing models, carrier mobility increases with temperature in the proposed model due to the discharge of the interface trap. The proposed model accurately expresses the measured I-V characteristics of commercial SiC MOSFETs over 300° C.
{"title":"A Compact Device Model for SiC MOSFETs Valid for Wide-Temperature Range","authors":"Kyohei Shimozato, S. Bian, Takashi Sato","doi":"10.1109/WiPDAAsia49671.2020.9360251","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360251","url":null,"abstract":"A compact model for SiC MOSFETs valid for wide temperature range is proposed. The model equations that represent temperature dependence of five model parameters are determined according to device physics. Unlike existing models, carrier mobility increases with temperature in the proposed model due to the discharge of the interface trap. The proposed model accurately expresses the measured I-V characteristics of commercial SiC MOSFETs over 300° C.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133090822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360293
Longyang Yu, Chengzi Yang, Chaojie Li, Min Wu, Xiang Zhou, Laili Wang
With the emerging technology of wide-band-gap power semiconductors and modern ferrite materials, the switching frequency of DC-DC converters based on gallium nitride devices (GaN) can be further pushed to megahertz range. The number of magnetic core is bottleneck of achieving both low cost and high power density. In this paper, a novel magnetic structure with a four-leg magnetic core is proposed to tackle the issue. The DC-DC converters including two inductances can be integrated into the proposed magnetic structure. Two windings of inductances are arranged as orthogonality in the magnetic structure, achieving magnetic decoupling. The inductances based on the magnetic structure are calculated and verified through magnetic circuit analysis and three-dimensional finite element analysis simulation. A GaN-based hardware prototype employing the proposed magnetic structure is built and tested to verify the performance.
{"title":"Magnetic Integration for GaN-based DC-DC Converters","authors":"Longyang Yu, Chengzi Yang, Chaojie Li, Min Wu, Xiang Zhou, Laili Wang","doi":"10.1109/WiPDAAsia49671.2020.9360293","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360293","url":null,"abstract":"With the emerging technology of wide-band-gap power semiconductors and modern ferrite materials, the switching frequency of DC-DC converters based on gallium nitride devices (GaN) can be further pushed to megahertz range. The number of magnetic core is bottleneck of achieving both low cost and high power density. In this paper, a novel magnetic structure with a four-leg magnetic core is proposed to tackle the issue. The DC-DC converters including two inductances can be integrated into the proposed magnetic structure. Two windings of inductances are arranged as orthogonality in the magnetic structure, achieving magnetic decoupling. The inductances based on the magnetic structure are calculated and verified through magnetic circuit analysis and three-dimensional finite element analysis simulation. A GaN-based hardware prototype employing the proposed magnetic structure is built and tested to verify the performance.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132634742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360267
F. Hsu, C. Hung, K. Chu, L. Lee, Chwan-Ying Lee
SiC MOSFET is one of the most popular power devices in some high-end applications. Since SiC MOSFET has already penetrated into many applications, the requirement of accurate SPICE models is a significant issue for circuit designers. From previous literature, researchers have already exported models that could well-approximate the output characteristics of realistic SiC MOSFETs. Yet, the capacitance models are still based on an exponential model. The mismatching between these rough models and practical devices may induce unpredictable failures. In this work, a simple and accurate SPICE capacitance model for SiC MOSFET has been established by inserting an auxiliary modified function into each capacitor model. Compared to conventional models, dynamic behavior similarity gains significant improvements. Moreover, a switching test has also been done to evaluate the dynamic performance. As a result, the simulated waveform by the proposed method is quite similar to the experimental waveform. In short, this paper provides a better method to match the characteristics of SiC MOSFET by a simple modified capacitance model.
SiC MOSFET是一些高端应用中最受欢迎的功率器件之一。由于SiC MOSFET已经渗透到许多应用中，精确的SPICE模型的要求是电路设计人员的一个重要问题。从以前的文献中，研究人员已经导出了可以很好地近似实际SiC mosfet输出特性的模型。然而，电容模型仍然基于指数模型。这些粗糙模型与实际装置之间的不匹配可能导致不可预测的故障。在本工作中，通过在每个电容模型中插入辅助修正函数，建立了简单准确的SiC MOSFET SPICE电容模型。与传统模型相比，动态行为相似度得到了显著提高。此外，还进行了开关试验，以评估其动态性能。结果表明，该方法模拟的波形与实验波形非常接近。总之，本文通过简单的修正电容模型提供了一种更好的方法来匹配SiC MOSFET的特性。
{"title":"A Dynamic Switching Response Improved SPICE Model for SiC MOSFET with Non-linear Parasitic Capacitance","authors":"F. Hsu, C. Hung, K. Chu, L. Lee, Chwan-Ying Lee","doi":"10.1109/WiPDAAsia49671.2020.9360267","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360267","url":null,"abstract":"SiC MOSFET is one of the most popular power devices in some high-end applications. Since SiC MOSFET has already penetrated into many applications, the requirement of accurate SPICE models is a significant issue for circuit designers. From previous literature, researchers have already exported models that could well-approximate the output characteristics of realistic SiC MOSFETs. Yet, the capacitance models are still based on an exponential model. The mismatching between these rough models and practical devices may induce unpredictable failures. In this work, a simple and accurate SPICE capacitance model for SiC MOSFET has been established by inserting an auxiliary modified function into each capacitor model. Compared to conventional models, dynamic behavior similarity gains significant improvements. Moreover, a switching test has also been done to evaluate the dynamic performance. As a result, the simulated waveform by the proposed method is quite similar to the experimental waveform. In short, this paper provides a better method to match the characteristics of SiC MOSFET by a simple modified capacitance model.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117306381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In high voltage power modules, the triple point lies between metallization, ceramic and silicone gel. Electric stress is much higher at triple point than average electric field. The situation gets worse when the triple point lies in the electrode spacing. Short distance between electrodes can enhance the electric stress and increase the damage from repeated PDs. This paper proves that interface between ceramic and silicone gel is a weak insulation area. Repeated partial discharges (PD) can induce surface breakdown along the interface area. Consequently, triple point combines high electric stress and weak insulation together. In order to separate the interface area from the edge of metallization, this paper proposes a new geometry of the ceramic substrate.
{"title":"Design of Packaging Structure in High Voltage Power Modules to Avoid Surface Breakdown","authors":"Feifei Yan, Laili Wang, Tao Yang, Binyu Wang, Fengtao Yang, Longyang Yu","doi":"10.1109/WiPDAAsia49671.2020.9360276","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360276","url":null,"abstract":"In high voltage power modules, the triple point lies between metallization, ceramic and silicone gel. Electric stress is much higher at triple point than average electric field. The situation gets worse when the triple point lies in the electrode spacing. Short distance between electrodes can enhance the electric stress and increase the damage from repeated PDs. This paper proves that interface between ceramic and silicone gel is a weak insulation area. Repeated partial discharges (PD) can induce surface breakdown along the interface area. Consequently, triple point combines high electric stress and weak insulation together. In order to separate the interface area from the edge of metallization, this paper proposes a new geometry of the ceramic substrate.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"19 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123451317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360282
Zhe Yang, Jianliang Chen, P. Williford, Fred Wang
This paper presents the converter design and cost comparison between Gallium Nitride (GaN)-based and Silicon (Si)-based 4.5-kW single-phase inverters. For fair comparison, both inverters are optimized under the same requirement as a practical Si PV inverter. The cost of the components are based on the component prices at high quantity. The study shows that although the cost of active devices and heatsink is higher for GaN-based inverter, the overall cost can be $ 19 (10%) lower than Si-based counterpart by using switching frequency 6 times higher, which drastically shrinks the passive filters. A GaN-based prototype is built and tested to verify the design.
{"title":"Cost Comparison Between GaN-based and Si-based 4.5-kW Single-phase Inverters","authors":"Zhe Yang, Jianliang Chen, P. Williford, Fred Wang","doi":"10.1109/WiPDAAsia49671.2020.9360282","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360282","url":null,"abstract":"This paper presents the converter design and cost comparison between Gallium Nitride (GaN)-based and Silicon (Si)-based 4.5-kW single-phase inverters. For fair comparison, both inverters are optimized under the same requirement as a practical Si PV inverter. The cost of the components are based on the component prices at high quantity. The study shows that although the cost of active devices and heatsink is higher for GaN-based inverter, the overall cost can be $ 19 (10%) lower than Si-based counterpart by using switching frequency 6 times higher, which drastically shrinks the passive filters. A GaN-based prototype is built and tested to verify the design.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129855101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360257
N. Jaiswal, V. N. Ramakrishnan, Sukhendu deb Roy
We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.
{"title":"Optimization of Vertical GaN SGT-MOSFET for Low Ron","authors":"N. Jaiswal, V. N. Ramakrishnan, Sukhendu deb Roy","doi":"10.1109/WiPDAAsia49671.2020.9360257","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360257","url":null,"abstract":"We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129590792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360297
Jinshu Lin, Yehui Yang, S. Yin, Xiong Xin, Runze Wang, Minghai Dong, Hui Li
The increasing demands towards the power density and miniaturization on the power converters make the transformer become the bottleneck. For the traditional transformer, the copper wire is fixed on magnetic core by using the plastic bobbin, which may lead to a bulky size. The planar transformer adopts the multi-layer printed circuit board (PCB) as the winding structure and also uses the planar core, thus to remarkably reduce the size, especially the height. For the DC/DC converter with a high step-up ratio, the transformer with a high turn ratio and the Cockcroft-Walton voltage multiplier are normally employed to achieve the high voltage gain. Since this converter normally works in the zero-voltage-switching (ZVS) mode with relatively low output power, the power dissipation of transformer becomes a key issue. This work demonstrates the loss model of a planar transformer, which is used in the 24-V/1.8-kW resonant DC/DC converter with 20-W peak output power. The loss analysis is compared with the experimental results and a good agreement achieved. It is found that the winding loss is the dominating factor of the total loss.
{"title":"Loss Model of High-Frequency Planar Transformer for High-Voltage Resonant DC/DC Converter","authors":"Jinshu Lin, Yehui Yang, S. Yin, Xiong Xin, Runze Wang, Minghai Dong, Hui Li","doi":"10.1109/WiPDAAsia49671.2020.9360297","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360297","url":null,"abstract":"The increasing demands towards the power density and miniaturization on the power converters make the transformer become the bottleneck. For the traditional transformer, the copper wire is fixed on magnetic core by using the plastic bobbin, which may lead to a bulky size. The planar transformer adopts the multi-layer printed circuit board (PCB) as the winding structure and also uses the planar core, thus to remarkably reduce the size, especially the height. For the DC/DC converter with a high step-up ratio, the transformer with a high turn ratio and the Cockcroft-Walton voltage multiplier are normally employed to achieve the high voltage gain. Since this converter normally works in the zero-voltage-switching (ZVS) mode with relatively low output power, the power dissipation of transformer becomes a key issue. This work demonstrates the loss model of a planar transformer, which is used in the 24-V/1.8-kW resonant DC/DC converter with 20-W peak output power. The loss analysis is compared with the experimental results and a good agreement achieved. It is found that the winding loss is the dominating factor of the total loss.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132871684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-09-23DOI: 10.1109/WiPDAAsia49671.2020.9360258
Minggang Chen, Shen Xu, Linlin Huang, Weifeng Sun
As GaN HEMT can achieve high switching frequency of several MHz easily, it was widely used in resonant converter for high power density. In this paper, the reverse conduction of GaN HEMT within active-clamped flyback (ACF) converter is analyzed, and a novel control method is proposed to reduce the reverse conduction related power loss. In order to verify the proposed control strategy, a 12V-3A GaN-based ACF is designed and fabricated. The experimental results show that the reverse conduction time is reduced from 300ns to 20ns, which contribute to a 1.2% increase in efficiency. The proposed control method is implemented by FPGA.1
{"title":"Improved Control of GaN-based Active-clamped FIyback Converter with Shorter Reverse Conduction Time","authors":"Minggang Chen, Shen Xu, Linlin Huang, Weifeng Sun","doi":"10.1109/WiPDAAsia49671.2020.9360258","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360258","url":null,"abstract":"As GaN HEMT can achieve high switching frequency of several MHz easily, it was widely used in resonant converter for high power density. In this paper, the reverse conduction of GaN HEMT within active-clamped flyback (ACF) converter is analyzed, and a novel control method is proposed to reduce the reverse conduction related power loss. In order to verify the proposed control strategy, a 12V-3A GaN-based ACF is designed and fabricated. The experimental results show that the reverse conduction time is reduced from 300ns to 20ns, which contribute to a 1.2% increase in efficiency. The proposed control method is implemented by FPGA.1","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"508 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123036786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silicon carbide (SiC) MOSFETs have been widely used in different power conversion applications due to their advantages of high switching frequency and low loss. Parallel connection of SiC MOSFET is a cost-effective and necessary solution for high power rating converter. However, due to the differences of devices parameters, imbalance current exists, which may damage the system. In this paper, the issues of the paralleling SiC MOSFETs are well analyzed based on the static characteristics of the devices. Based on the analysis, we can find that the unbalanced transient current caused by the differences of threshold voltages are important and require to be mitigated when paralleling SiC MOSFETs. Then, the operational principles of the proposed variable gate voltage control are presented. Simulation and experiment results are presented and analyzed to validate the effectiveness of the proposed active gate driving method.
{"title":"Variable Gate Voltage Control for Paralleled SiC MOSFETs","authors":"Yuqi Wei, Rosten Sweeting, Md Maksudul Hossain, Haider Mhiesan, A. Mantooth","doi":"10.1109/WiPDAAsia49671.2020.9360253","DOIUrl":"https://doi.org/10.1109/WiPDAAsia49671.2020.9360253","url":null,"abstract":"Silicon carbide (SiC) MOSFETs have been widely used in different power conversion applications due to their advantages of high switching frequency and low loss. Parallel connection of SiC MOSFET is a cost-effective and necessary solution for high power rating converter. However, due to the differences of devices parameters, imbalance current exists, which may damage the system. In this paper, the issues of the paralleling SiC MOSFETs are well analyzed based on the static characteristics of the devices. Based on the analysis, we can find that the unbalanced transient current caused by the differences of threshold voltages are important and require to be mitigated when paralleling SiC MOSFETs. Then, the operational principles of the proposed variable gate voltage control are presented. Simulation and experiment results are presented and analyzed to validate the effectiveness of the proposed active gate driving method.","PeriodicalId":432666,"journal":{"name":"2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121639571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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