Implant damage and diffusion behavior of indium in silicon-on-insulator

Abstract

Ion implant damage and diffusion behavior of indium implanted into the separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) substrates at different energies and doses are studied. Rutherford backscattering spectrometry in channeling mode (RBS/C) and secondary ion mass spectrometry (SIMS) are used to characterize our samples. After relatively high-dose implantation (1/spl times/10/sup 14/ cm/sup -2/ at 200 kV), a completely amorphized layer is formed which can be almost entirely repaired by subsequent annealing. At low energy and low dose implantation, the indium diffusion profiles are similar with those in bulk silicon substrates. However, under the highest-dose implantation condition (1/spl times/10/sup 14/ cm/sup -2/), the buried interface of SOI, which acts as an recombination center of point defects, can notably affect the indium diffusion profile by trapping indium atoms at the point defects to the interface and thus leaving a steep profile of indium in the top silicon layer.