{"title":"High step down ratio (400 V to 1 V) phase shift full bridge DC/DC converter for data center power supplies with GaN FETs","authors":"Yutian Cui, L. Tolbert","doi":"10.1109/WIPDA.2013.6695554","DOIUrl":null,"url":null,"abstract":"Energy efficiency of typical data centers is less than 50% where more than half of the power is consumed during power conversion, distribution, cooling, etc. In this paper, a single power stage architecture that converts 400 V directly to 1 V is discussed. Input series and output parallel structure (ISOP) is selected due to the high input voltage and large output current operation condition. Phase shift full bridge (PSFB) DC/DC converter with high step down ratio (66:1) is built with Gallium Nitride (GaN) FETs targeting at high efficiency. This paper mainly focuses on the study of a single 66 V to 1 V converter. Prototypes of the PSFB converter is designed, built, and tested. Preliminary experimental results are provided to verify the design.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2013.6695554","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
Energy efficiency of typical data centers is less than 50% where more than half of the power is consumed during power conversion, distribution, cooling, etc. In this paper, a single power stage architecture that converts 400 V directly to 1 V is discussed. Input series and output parallel structure (ISOP) is selected due to the high input voltage and large output current operation condition. Phase shift full bridge (PSFB) DC/DC converter with high step down ratio (66:1) is built with Gallium Nitride (GaN) FETs targeting at high efficiency. This paper mainly focuses on the study of a single 66 V to 1 V converter. Prototypes of the PSFB converter is designed, built, and tested. Preliminary experimental results are provided to verify the design.
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