C. Neft, E. Hanna, V. Mehrotra, K. Gould, A. Bhunia
{"title":"Design and testing of a 1 kW silicon-carbide (SiC) power module","authors":"C. Neft, E. Hanna, V. Mehrotra, K. Gould, A. Bhunia","doi":"10.1109/WIPDA.2013.6695563","DOIUrl":null,"url":null,"abstract":"A high-temperature, SiC JFET power module was designed for use in a bi-directional, single-stage DC-DC converter. The converter is the interface between a 28 V battery and a 300 V bus, and is required to operate in a harsh environment with an ambient temperature of 120 °C and available 100 °C water-ethylene glycol (WEG) coolant. The power module consists of two JFETs in a single pole configuration with SiC Schottky diodes used as freewheeling diodes. The power module has been subjected to standard characterization tests and also extended (tens of hours) operational tests to confirm its suitability for the application. To the best of our knowledge this is the first demonstration of long term reliability of high temperature (175 °C device junction) SiC power electronics power conversion, with tens of hours of operation well past its infant mortality period.","PeriodicalId":313351,"journal":{"name":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2013.6695563","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A high-temperature, SiC JFET power module was designed for use in a bi-directional, single-stage DC-DC converter. The converter is the interface between a 28 V battery and a 300 V bus, and is required to operate in a harsh environment with an ambient temperature of 120 °C and available 100 °C water-ethylene glycol (WEG) coolant. The power module consists of two JFETs in a single pole configuration with SiC Schottky diodes used as freewheeling diodes. The power module has been subjected to standard characterization tests and also extended (tens of hours) operational tests to confirm its suitability for the application. To the best of our knowledge this is the first demonstration of long term reliability of high temperature (175 °C device junction) SiC power electronics power conversion, with tens of hours of operation well past its infant mortality period.
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