An on-chip 72 K pseudo two-port cache memory subsystem

S.C.-M. Chuang, T. Mukherjee, G. Braceras, S. Litten, M. Peters, J. LeBlanc, G. Taroni, C. Akrout
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引用次数: 3

Abstract

A CMOS VLSI cache memory subsystem, which includes a 72 K cache memory, a 11 K tag memory, a 1.3 K state array, two special buffers, and cache control logic, has been developed and integrated on an experimental microprocessor chip. The unique one-port cache incorporates a reload buffer and a store back buffer to function as a two-port cache, one port for CPU read/write and the other port to the system bus for simultaneous cache reload. The one-port tag also bears pseudo-two-port characteristics by using a cycle-split scheme to access the tag twice in a cache cycle. This allows the tag memory to be used for bus snooping as well as normal cache operation without using the conventional dual-port tag approach to maintain cache data coherency. A unique cache reload mechanism which utilizes the cache read-modify-write cycle is incorporated to maintain data coherency in the reload buffer and store back buffer. This is essential for enhancing snoopy cache performance with pseudo-two-port capability
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片上72k伪双端口缓存存储器子系统
设计了一个CMOS VLSI高速缓存子系统,该子系统包括一个72k的高速缓存、一个11k的标签存储器、一个1.3 K的状态阵列、两个专用缓冲器和缓存控制逻辑,并将其集成在一个实验性微处理器芯片上。独特的单端口缓存包含一个重新加载缓冲区和一个存储回缓冲区,作为一个双端口缓存,一个端口为CPU读/写和另一个端口到系统总线同步缓存重新加载。单端口标记还具有伪双端口特征,它使用循环分割方案在缓存周期中访问标记两次。这允许标签内存用于总线窥探以及正常的缓存操作,而无需使用传统的双端口标签方法来保持缓存数据的一致性。采用了一种独特的缓存重新加载机制,该机制利用缓存读-修改-写周期来保持重新加载缓冲区和存储回缓冲区中的数据一致性。这对于使用伪双端口功能增强snoopy缓存性能至关重要
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A divided/shared bitline sensing scheme for 64 Mb DRAM core High speed page mode sensing scheme for EPROMs and flash EEEPROMs using divided bit line architecture An on-chip 72 K pseudo two-port cache memory subsystem Architecture and design of a second-level cache chip with copy-back and 160 MB/s burst-transfer features A high random-access-data-rate 4 Mb DRAM with pipeline operation
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