{"title":"An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network","authors":"M. Kucharski, H. Ng, D. Kissinger","doi":"10.1109/ESSCIRC.2019.8902847","DOIUrl":null,"url":null,"abstract":"This paper presents a 4-way power amplifier (PA) using a T-junction network for efficient power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology with fT/fMAX= 300/500 GHz. The PA achieves 30.2 dB peak linear gain at 170 GHz and more than 27.2 dB in 155-180 GHz range. At 170 GHz the circuit delivers up to 18 dBm saturated output power (P SAT) with output referred 1 dB compression point (OP 1dB) at 15.6 dBm, which to the best author’s knowledge, are the highest among other previously reported silicon-based PAs above 140 GHz.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
This paper presents a 4-way power amplifier (PA) using a T-junction network for efficient power combining. The circuit was implemented using a 130 nm SiGe BiCMOS technology with fT/fMAX= 300/500 GHz. The PA achieves 30.2 dB peak linear gain at 170 GHz and more than 27.2 dB in 155-180 GHz range. At 170 GHz the circuit delivers up to 18 dBm saturated output power (P SAT) with output referred 1 dB compression point (OP 1dB) at 15.6 dBm, which to the best author’s knowledge, are the highest among other previously reported silicon-based PAs above 140 GHz.
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