{"title":"Temperature response of irradiated MOSFETs","authors":"S.S. Lornakin, G. Zebrev, D.V. Ivashin","doi":"10.1109/MIEL.2002.1003372","DOIUrl":null,"url":null,"abstract":"It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
It was shown experimentally that above threshold transconductance in investigated n-MOSFETs degrades after irradiation and short-term anneal only in subthreshold and moderate inversion regions. Subsequent durable anneal degrades transconductance on the whole operating gate bias range.
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