J. Jang, S. Cha, Y. Choi, D. Kang, T. Butler, D. Hasko, J.E. Jung, J.M. Kim, G. Amaratunga
{"title":"Nanotube based Vertical Nano-devices for High Integration Density","authors":"J. Jang, S. Cha, Y. Choi, D. Kang, T. Butler, D. Hasko, J.E. Jung, J.M. Kim, G. Amaratunga","doi":"10.1109/NANOEL.2006.1609695","DOIUrl":null,"url":null,"abstract":"Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANOEL.2006.1609695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Various nano-devices based on vertical nanotubes were developed. Carbon nanotubes (CNTs) were employed as a functional part or a nano structure of a nanoelectromechanical (NEM) switch, nano-capacitor, and NEM-dynamic random access memory (DRAM). The unique vertical structure of nanotubes allows high integration density for devices.
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