Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609754
P.T. Liu, C. Tsai, K. Kin, P. Chang, C. Chen, H.F. Cheng, T. Chang
This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emission characteristics. In this work, CNT emitters are activated with commonly used heating process and supercritical carbon dioxide (SCCO2) fluids technology for removing adsorbed residue moisture. Experimental results have demonstrated that the electrical stability and field emission enhancement of CNT emitters are effectively achieved by the SCCO2fluids treatment compared to the heating process, due to the minimization of residuary moisture in CNTs.
{"title":"Effect of Supercritical Fluids on Field Emission from Carbon Nanotubes","authors":"P.T. Liu, C. Tsai, K. Kin, P. Chang, C. Chen, H.F. Cheng, T. Chang","doi":"10.1109/NANOEL.2006.1609754","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609754","url":null,"abstract":"This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emission characteristics. In this work, CNT emitters are activated with commonly used heating process and supercritical carbon dioxide (SCCO2) fluids technology for removing adsorbed residue moisture. Experimental results have demonstrated that the electrical stability and field emission enhancement of CNT emitters are effectively achieved by the SCCO2fluids treatment compared to the heating process, due to the minimization of residuary moisture in CNTs.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125926465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609747
G. Subramaniam
Fabrication of 3-D PBGM is a four stage process: the synthesis of monodisperse spherical particles, their self-assembly to form a template, infiltration of materials of interest and removal of template. The template was formed on a substrate by the self-assembly or electrophoretic deposition of silica into a FCC structure. Infiltrations of interstitial spaces were tried by sputtering and by in situ chemical reactions.
{"title":"Fabrication of Photonic Crystals","authors":"G. Subramaniam","doi":"10.1109/NANOEL.2006.1609747","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609747","url":null,"abstract":"Fabrication of 3-D PBGM is a four stage process: the synthesis of monodisperse spherical particles, their self-assembly to form a template, infiltration of materials of interest and removal of template. The template was formed on a substrate by the self-assembly or electrophoretic deposition of silica into a FCC structure. Infiltrations of interstitial spaces were tried by sputtering and by in situ chemical reactions.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126176089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609737
P. Yupapin, C. Teeka, P. Chitsakul
In this paper, we demonstrate the mathematical simulation data of light traveling in an optical micro ring resonator. The optical nonlinear properties such as chaos, bifurcation, bistability and instability of the optical outputs are studied. By changing the optical parameters that result the change of the optical output intensities, the nonlinear behaviors such as bifurcation, chaos and bistability effects are occurred. The relationship between the optical parameters and output intensities are derived by varying the interested parameters such as coupling coefficient (κ), nonlinear refractive index (n2), and linear phase shift (φ0). The results obtained are presented and plotted showing that the optical parameters can be changed i. e. controlled, and then the nonlinear effects characteristics can be predicted and controlled.
{"title":"Mathematical Simulation of Nonlinear Effects in Micro Ring Resonator","authors":"P. Yupapin, C. Teeka, P. Chitsakul","doi":"10.1109/NANOEL.2006.1609737","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609737","url":null,"abstract":"In this paper, we demonstrate the mathematical simulation data of light traveling in an optical micro ring resonator. The optical nonlinear properties such as chaos, bifurcation, bistability and instability of the optical outputs are studied. By changing the optical parameters that result the change of the optical output intensities, the nonlinear behaviors such as bifurcation, chaos and bistability effects are occurred. The relationship between the optical parameters and output intensities are derived by varying the interested parameters such as coupling coefficient (κ), nonlinear refractive index (n2), and linear phase shift (φ0). The results obtained are presented and plotted showing that the optical parameters can be changed i. e. controlled, and then the nonlinear effects characteristics can be predicted and controlled.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123746929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609742
D. Das, T. Renz
This paper presents a software application, DasPsimulator created in Java. This is a simulation model similar to SimCm [ 1]. While SimCm is limited to its capability to simulate only the P dissolution operation, the DasPsimulator is capable of simulating Membrane Division, Membrane Creation and Membrane String Replication operations. This is a first step to cross the interface between simulation and a Distributed implementation of P Systems able to capture the parallelism existing in the membrane computing area. The tool is user friendly, allowing the user to follow the evolution of a P system in a visual way. The simulator can be used to perform closer inspection of P system theory by the advanced researcher and it can also be helpful to individuals interested in learning and understanding how P systems work.
{"title":"A Simulation Model for P Systems with Active Membranes","authors":"D. Das, T. Renz","doi":"10.1109/NANOEL.2006.1609742","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609742","url":null,"abstract":"This paper presents a software application, DasPsimulator created in Java. This is a simulation model similar to SimCm [ 1]. While SimCm is limited to its capability to simulate only the P dissolution operation, the DasPsimulator is capable of simulating Membrane Division, Membrane Creation and Membrane String Replication operations. This is a first step to cross the interface between simulation and a Distributed implementation of P Systems able to capture the parallelism existing in the membrane computing area. The tool is user friendly, allowing the user to follow the evolution of a P system in a visual way. The simulator can be used to perform closer inspection of P system theory by the advanced researcher and it can also be helpful to individuals interested in learning and understanding how P systems work.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"523 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116545444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609721
M.K. Mahanta
It is well known that Laguerre-Gaussian (LG) laser beams with orbital angular momentum (OAM), resulting from a phase singularity and created from the readily available Hermite-Gaussian (HG) laser beam, carry the potential for providing an unlimited number of orbital angular momentum states that could be used for enhanced processing of quantum info mation (QI). This paper presents a comprehensive set of experimentation on the fabrication and use of computer generated holograms to create LG beams from the HG profile of an ordinary He-Ne laser and characterization thereof in preparation for QI applications.
{"title":"Experimentation on Laguerre-Gaussian laser beams for QI application","authors":"M.K. Mahanta","doi":"10.1109/NANOEL.2006.1609721","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609721","url":null,"abstract":"It is well known that Laguerre-Gaussian (LG) laser beams with orbital angular momentum (OAM), resulting from a phase singularity and created from the readily available Hermite-Gaussian (HG) laser beam, carry the potential for providing an unlimited number of orbital angular momentum states that could be used for enhanced processing of quantum info mation (QI). This paper presents a comprehensive set of experimentation on the fabrication and use of computer generated holograms to create LG beams from the HG profile of an ordinary He-Ne laser and characterization thereof in preparation for QI applications.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122293203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609765
T. Nee, Ya-Fen Wu, R. Lin, Jiunn-Chyi Lee
In this study we investigated the effects that the carrier dynamics have on the temperature- and excitation-intensity-dependent photoluminescence (PL) spectra of a self-assembled quantum dot heterostructure. A rate equation model is proposed to take into account the dot size distribution, the random population of density of states, state filling effects, and the important carrier transfer mechanisms for the quantum dot system, including carrier capture, relaxation, thermal emission, and retrapping. This model reproduces the PL spectra quite well. Our quantitative calculations of the behavior of the thermal emitting carriers under various incident power intensities within the temperature range 15−240 K explain the carrier transfer process quite reasonably for the quantum dot system. In addition, we discuss the thermal redistribution and state filling effects in detail in our analysis of the dependence of the PL spectra on the temperature and excitation power intensity applied to the sample.
{"title":"Temperature and Excitation Dependence of Photoluminescence Spectra of InAs/GaAs Quantum Dot Heterostructures","authors":"T. Nee, Ya-Fen Wu, R. Lin, Jiunn-Chyi Lee","doi":"10.1109/NANOEL.2006.1609765","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609765","url":null,"abstract":"In this study we investigated the effects that the carrier dynamics have on the temperature- and excitation-intensity-dependent photoluminescence (PL) spectra of a self-assembled quantum dot heterostructure. A rate equation model is proposed to take into account the dot size distribution, the random population of density of states, state filling effects, and the important carrier transfer mechanisms for the quantum dot system, including carrier capture, relaxation, thermal emission, and retrapping. This model reproduces the PL spectra quite well. Our quantitative calculations of the behavior of the thermal emitting carriers under various incident power intensities within the temperature range 15−240 K explain the carrier transfer process quite reasonably for the quantum dot system. In addition, we discuss the thermal redistribution and state filling effects in detail in our analysis of the dependence of the PL spectra on the temperature and excitation power intensity applied to the sample.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122085938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609729
H. Miki, T. Takeno, T. Takagi, A. Bozhko, M. Shupegin, H. Onodera
Superconductivity in tungsten-containing carbon-oxide film was reported. The film with 500 nm thickness was deposited onto polycrystalline silicon-oxides using chemical vapor deposition and co-sputtering of tungsten metal target. The structure of the film was investigated by Raman spectroscopy and X-ray diffraction measurements and the results indicated that the structure of the film is amorphous. The temperature dependence on resistivity was measured in the temperature range of 2-300 K. At the temperature of around 4.2 K resistive superconducting transition was observed. In order that the tungsten oxide and tungsten carbide with which super-conductive transition temperature is different formed the finite cluster group, it can be understand by percolation theory that the superconducting phase of the total system appears. The diamagnetism was observed below 3.8 K, which is consistent with resistive superconducting transition.
{"title":"Superconducting property in tungsten containing amorphous carbon composite","authors":"H. Miki, T. Takeno, T. Takagi, A. Bozhko, M. Shupegin, H. Onodera","doi":"10.1109/NANOEL.2006.1609729","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609729","url":null,"abstract":"Superconductivity in tungsten-containing carbon-oxide film was reported. The film with 500 nm thickness was deposited onto polycrystalline silicon-oxides using chemical vapor deposition and co-sputtering of tungsten metal target. The structure of the film was investigated by Raman spectroscopy and X-ray diffraction measurements and the results indicated that the structure of the film is amorphous. The temperature dependence on resistivity was measured in the temperature range of 2-300 K. At the temperature of around 4.2 K resistive superconducting transition was observed. In order that the tungsten oxide and tungsten carbide with which super-conductive transition temperature is different formed the finite cluster group, it can be understand by percolation theory that the superconducting phase of the total system appears. The diamagnetism was observed below 3.8 K, which is consistent with resistive superconducting transition.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129208851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper we demonstrate that the improvement in the emission intensity afforded by the introduction of multiquantum barrier (MQB) structures in an InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) is attributable to increased excitation cross sections. Over the temperature range from 300 to 20 K, the excitation cross sections of the MQW emissions possessing MQB structures were between 9.6 × 10-12cm2and 5.3 × 10-15cm2, while those possessing GaN barriers were between 8.1 × 10-12cm2and 4.5 × 10-15cm2. We found, however, that the figure of merit for the LED light output was the capture fraction of the cross section; we observed that the dependence of the optical intensity on the temperature coincided with the evolution of the capture fraction. This analysis permitted us to assign the capture cross-section ratios at room temperature for the MQWs with MQBs and with GaN barriers as 0.46 and 0.35. Furthermore, the MQW system possessing well-designed MQB structures not only exhibited the thermally insensitive luminescence but also inhibited energetic carrier overflow.
{"title":"Effect of multiquantum barriers on performance of InGaN/GaN multiple-quantum-well light-emitting diodes","authors":"T. Nee, Jen-Cheng Wang, R. Lin","doi":"10.1063/1.2761824","DOIUrl":"https://doi.org/10.1063/1.2761824","url":null,"abstract":"In this paper we demonstrate that the improvement in the emission intensity afforded by the introduction of multiquantum barrier (MQB) structures in an InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) is attributable to increased excitation cross sections. Over the temperature range from 300 to 20 K, the excitation cross sections of the MQW emissions possessing MQB structures were between 9.6 × 10-12cm2and 5.3 × 10-15cm2, while those possessing GaN barriers were between 8.1 × 10-12cm2and 4.5 × 10-15cm2. We found, however, that the figure of merit for the LED light output was the capture fraction of the cross section; we observed that the dependence of the optical intensity on the temperature coincided with the evolution of the capture fraction. This analysis permitted us to assign the capture cross-section ratios at room temperature for the MQWs with MQBs and with GaN barriers as 0.46 and 0.35. Furthermore, the MQW system possessing well-designed MQB structures not only exhibited the thermally insensitive luminescence but also inhibited energetic carrier overflow.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116268238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609717
S. Sinha
The demand for trained professionals in the area of Nanotechnology is increasing as the technology is getting commercialized . Among other regions, the north-eastern United States (the states of New York, New Jersey, Massachusetts and Connecticut) is noticing a quick rise of Nanotechnology and related businesses. Some of these businesses are currently in the process of moving the technology from the lab to the market place and are in need of engineers (Bachelors and Masters level) to achieve this goal. An undergraduate course (Nanoscale Sciences) and a graduate level course (Introduction to Nanotechnology) was offered to Engineering and Science students in the 2004-2005 academic year at the University of New Haven to educate such professionals. A few local Nanotechnology business aided in developing the curriculum and shared resources with the students. The undergraduate course was an overview of Nanotechnology with an emphasis on Nanomaterials. The Graduate course was targeted for Electrical and Computer Engineers with an emphasis on Nanodevices.
{"title":"Introductory Nanotechnology Courses: Experiences of an Educator","authors":"S. Sinha","doi":"10.1109/NANOEL.2006.1609717","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609717","url":null,"abstract":"The demand for trained professionals in the area of Nanotechnology is increasing as the technology is getting commercialized . Among other regions, the north-eastern United States (the states of New York, New Jersey, Massachusetts and Connecticut) is noticing a quick rise of Nanotechnology and related businesses. Some of these businesses are currently in the process of moving the technology from the lab to the market place and are in need of engineers (Bachelors and Masters level) to achieve this goal. An undergraduate course (Nanoscale Sciences) and a graduate level course (Introduction to Nanotechnology) was offered to Engineering and Science students in the 2004-2005 academic year at the University of New Haven to educate such professionals. A few local Nanotechnology business aided in developing the curriculum and shared resources with the students. The undergraduate course was an overview of Nanotechnology with an emphasis on Nanomaterials. The Graduate course was targeted for Electrical and Computer Engineers with an emphasis on Nanodevices.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133456395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-03-27DOI: 10.1109/NANOEL.2006.1609767
S. Mahmud, M. Abdullah
We report the discovery of two-dimensional (2-D) nanotripods of ZnO, a new member of the ZnO nanostructure family. These planar nanotripods are synthesized via a novel approach known as catalyst-free combust-oxidized mesh (CFCOM) process that we developed using a ZnO factory furnace. At about 1200 °C, high velocity zinc vapor is instantly oxidized and captured in a steel mesh for 20s and then air-quenched. From this subminute synthesis process, three types of polycrystalline 2-D tripodal nanostructures are discovered. The ZnO tripods are composed of three planar arms that appear as rectangular nanoplates. We propose two growth routes for these planar tripods, namely base-arm and tripodal-core routes. For the former route, growth begins with the base arm in [[unk] [unk] 20 ] direction. During quenching, the other two arms grow from newly formed tapered facets, ([unk]110) and (1[unk]10). The tripodal-core growth route involves the formation of a hexagonal disc with ±( 0002 ) larger surfaces. From this core, three arms grow simultaneously in [ 11[unk]0 ], [ [unk]10 ] and [ 1[unk]10 ] directions, while the core transforms into a Y-shaped configuration with ±( 10[unk]0), ±( 01[unk]0 ) and ±( [unk]100 ) planes. Morphological analyses are performed using FESEM, EDS, TEM and XRD. Photoluminescence test detects the presence of structural defects associated with green and red peak emissions.
{"title":"Nanotripods of Zinc Oxide","authors":"S. Mahmud, M. Abdullah","doi":"10.1109/NANOEL.2006.1609767","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609767","url":null,"abstract":"We report the discovery of two-dimensional (2-D) nanotripods of ZnO, a new member of the ZnO nanostructure family. These planar nanotripods are synthesized via a novel approach known as catalyst-free combust-oxidized mesh (CFCOM) process that we developed using a ZnO factory furnace. At about 1200 °C, high velocity zinc vapor is instantly oxidized and captured in a steel mesh for 20s and then air-quenched. From this subminute synthesis process, three types of polycrystalline 2-D tripodal nanostructures are discovered. The ZnO tripods are composed of three planar arms that appear as rectangular nanoplates. We propose two growth routes for these planar tripods, namely base-arm and tripodal-core routes. For the former route, growth begins with the base arm in [[unk] [unk] 20 ] direction. During quenching, the other two arms grow from newly formed tapered facets, ([unk]110) and (1[unk]10). The tripodal-core growth route involves the formation of a hexagonal disc with ±( 0002 ) larger surfaces. From this core, three arms grow simultaneously in [ 11[unk]0 ], [ [unk]10 ] and [ 1[unk]10 ] directions, while the core transforms into a Y-shaped configuration with ±( 10[unk]0), ±( 01[unk]0 ) and ±( [unk]100 ) planes. Morphological analyses are performed using FESEM, EDS, TEM and XRD. Photoluminescence test detects the presence of structural defects associated with green and red peak emissions.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132155410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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