B. Govoreanu, Leqi Zhang, D. Crotti, Yang‐Shun Fan, V. Paraschiv, H. Hody, T. Witters, J. Meersschaut, S. Clima, C. Adelmann, M. Jurczak
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引用次数: 4
Abstract
We report on a novel Thin-Silicon Injector (TSI) selector concept with bidirectional operation for high density resistive switching memory. Model-based analysis shows how the current drive-nonlinearity trade-off can be broken by properly combining physical material properties to enable decoupling control parameters of the current injection from those of selectivity. We demonstrate experimentally structures down to 40nm-size, featuring a high-drive current of ~1MA/cm2, high current-voltage half-bias nonlinearity exceeding 6.103 at maximum current drive and very good reliability of >107cy endurance, with limited degradation of the selectivity. The selector has below 20nm thickness and it is fully implementable with readily available BEOL CMOS-compatible materials and processes.
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