A. Schonhals, D. Wouters, A. Marchewka, T. Breuer, K. Skaja, V. Rana, S. Menzel, R. Waser
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引用次数: 14
Abstract
The thickness of the oxygen scavenging metal layer, forming the Ohmic contact in HfOx and TaOx VCM-type Metal-Oxide ReRAM cells, was found to be the critical experimental parameter controlling stable bipolar resistive switching versus the occurrence of single-cell complimentary switching. It is argued that the physically controlling parameter is the effective work function (a)symmetry between top and bottom electrode contact of the ReRAM cell. For a thin metal cap layer, oxidation increases the effective work function changing from Ohmic to a more blocking contact behavior.
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