{"title":"Grounded-trench-MOS structure assisted normally-off bipolar-mode power FET","authors":"Y. Murakami, Y. Nakajima, T. Hayashi, T. Mihara","doi":"10.1109/ISPSD.1996.509512","DOIUrl":null,"url":null,"abstract":"A normally-off bipolar-mode FET having a V/sub DSS/ of 700 V with n/sup +/-n/sup -/-n/sup +/ structure has been developed. The transistor has a new type trench-MOS structure. N/sup +/-source and n/sup -/-channel are sandwiched by deep trench-MOS structures whose potential is fixed to the ground. They act virtually as the gates of a long-channel JFET. The p-gate contacts with every insulating film, which controls the channel conditions by the potential of p-type inversion layer. When the gate is shorted, the channel withstands up to the avalanche condition. Furthermore, it has a V/sub DSO/ of about 400 V.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509512","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A normally-off bipolar-mode FET having a V/sub DSS/ of 700 V with n/sup +/-n/sup -/-n/sup +/ structure has been developed. The transistor has a new type trench-MOS structure. N/sup +/-source and n/sup -/-channel are sandwiched by deep trench-MOS structures whose potential is fixed to the ground. They act virtually as the gates of a long-channel JFET. The p-gate contacts with every insulating film, which controls the channel conditions by the potential of p-type inversion layer. When the gate is shorted, the channel withstands up to the avalanche condition. Furthermore, it has a V/sub DSO/ of about 400 V.
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