Aixi Zhang, Jin He, Xiaoan Zhu, Yue Hu, Hao Wang, W. Deng, Hongyu He, Ying Zhu, Xiangyu Zhang, M. Chan
{"title":"Numerical study on nanowire tunnel FET with dynamic threshold operation architecture","authors":"Aixi Zhang, Jin He, Xiaoan Zhu, Yue Hu, Hao Wang, W. Deng, Hongyu He, Ying Zhu, Xiangyu Zhang, M. Chan","doi":"10.1109/EDSSC.2013.6628211","DOIUrl":null,"url":null,"abstract":"In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a nanowire tunnel field-effect transistor with dynamic threshold operation architecture (DT-NTFET) is proposed and the numerical study on its characteristics is presented. It shows that, in DT operation, the DT-NTFET can choose the threshold voltage (VT) flexibly by changing the adjust gate voltage, thus it can be applied as a multifunctional device in the future circuit design; in common mode operation, its subthreshold swing (SS) gets steeper, and its drive current is enhanced with no loss of OFF-state current.
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