Fabrication of electrostatic micro-actuators for a hard disk drive application

H. Fujita, T. Iizuka
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Abstract

Micro-actuators are developed for a hard disk drive application. The aim is to obtain a high density of data storage by positioning the read and write head element precisely. The desired specifications are a displacement of ±0.5 μm, operating voltage of 20 V and a structural resonance frequency of 15 kHz. We manufactured the metallic actuator by using thick photoresist lithography and nickel electroplating. The electrostatic gap between the mover and the stator has a high aspect ratio, in order to achieve low voltage operation. We deposited a copper layer by electroplating as a vertical sacrificial layer. Then we removed the copper layer at last process step to make the electrostatic gap with high aspect ratio. We utilize a photoresist which has a thickness of 10 μm as the first trial. We completed the process and operated the actuator successfully. We also developed a silicon actuator using the silicon deep etching and deposition technology. We use an Inductive Coupled Plasma-Reactive Ion Etching (ICP-RIE) machine for silicon etching and a Low Pressure Chemical Vapor Deposition (LPCVD) machine for deposition of the vertical sacrificial layer of SiO2 and the mover structure of polySi. We obtained an actuator which had thickness of 100 μm with the electrode gap having a aspect ratio of 50.
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用于硬盘驱动器的静电微致动器的制造
微致动器是为硬盘驱动器应用而开发的。其目的是通过精确定位读写头元件来获得高密度的数据存储。要求位移为±0.5 μm,工作电压为20v,结构谐振频率为15khz。采用厚光刻工艺和镀镍工艺制备了金属致动器。动、定子之间的静电间隙具有很高的纵横比,以实现低电压运行。我们电镀了一层铜作为垂直牺牲层。然后在最后一道工序去除铜层,得到高纵横比的静电间隙。我们使用厚度为10 μm的光刻胶作为第一次试验。我们完成了这个过程,并成功地操作了执行器。我们还利用硅深刻蚀和沉积技术开发了一种硅致动器。我们使用电感耦合等离子体反应离子蚀刻(ICP-RIE)机进行硅蚀刻,使用低压化学气相沉积(LPCVD)机沉积SiO2的垂直牺牲层和多晶硅的移动结构。我们得到了厚度为100 μm,电极间距宽高比为50的致动器。
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