Room-temperature continuous-wave lasing from InAs/GaAs quantum dot laser grown by molecular beam epitaxy

Abstract

Quantum dot lasers are predicted to have proved lasing characteristics compared to quantum well and quantum wire lasers. We report on quantum dot lasers with active media of vertically stacked InAs quantum dot layers grown by molecular beam epitaxy. The laser diodes were fabricated and the threshold current density of 220 A/cm/sup 2/ was achieved at room temperature with lasing wavelength of 951 nm. The characteristic temperature T/sub 0/ was measured to be 333 K and 157 K for the temperature ranges of 40-180 K and 180-300 K, respectively.