{"title":"Heterostructure II-VI materials and devices for infrared imaging","authors":"R. Ashokan, S. Sivananthan","doi":"10.1109/COMMAD.1998.791591","DOIUrl":null,"url":null,"abstract":"The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"29 21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The recent developments in the II-VI heterostructure materials and devices for infrared imaging applications, with particular emphasize on molecular beam epitaxy and fabrication of double layer planar heterostructure devices are discussed. Quality of the CdTe layers grown on different substrate orientations are compared. The HgCdTe grown on CdTe/Si is shown to be comparable to that of HgCdTe/CdZnTe. State-of-the-Art performance of devices made on HgCdTe/CdTe/Si is demonstrated.
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