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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)最新文献

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Injection signal wavelength dependence of a subharmonically synchronous mode-locked monolithic semiconductor laser 亚谐波同步锁模单片半导体激光器注入信号波长依赖性
M. Attygalle, A. Nirmalathas, H. Liu, D. Novak
Subharmonic synchronous mode-locking (SSML) has been shown to be a very attractive scheme for achieving high repetition rate optical pulses at mm-wave frequencies, and beyond. In this paper, we report the dependence of the injected signal wavelength on the performance of SSML lasers around its lasing wavelengths. In particular, the effect of coherent interaction will be addressed.
亚谐波同步锁模(SSML)已被证明是一种非常有吸引力的方案,以实现高重复率的光脉冲在毫米波频率,以及更高的频率。在本文中,我们报道了注入信号波长与SSML激光器在其激光波长周围的性能的关系。特别地,将讨论相干相互作用的影响。
{"title":"Injection signal wavelength dependence of a subharmonically synchronous mode-locked monolithic semiconductor laser","authors":"M. Attygalle, A. Nirmalathas, H. Liu, D. Novak","doi":"10.1109/COMMAD.1998.791621","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791621","url":null,"abstract":"Subharmonic synchronous mode-locking (SSML) has been shown to be a very attractive scheme for achieving high repetition rate optical pulses at mm-wave frequencies, and beyond. In this paper, we report the dependence of the injected signal wavelength on the performance of SSML lasers around its lasing wavelengths. In particular, the effect of coherent interaction will be addressed.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115304276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Large-signal model for a resonant heterojunction tunnelling transistor RTD(n)-p-n 谐振异质结隧道晶体管RTD(n)-p-n的大信号模型
M. Wintrebert-Fouquet, D. Skellern
A large-signal model is presented for a Resonant Tunnelling Bipolar Transistor (RTBT) with a double barrier structure at the Emitter. These devices show large collector current peak-to-valley ratios (PVR) in the common-emitter transistor configuration because of significant current gain reduction beyond resonance. This large PVR makes them attractive devices for circuit applications, including high speed analog-to-digital converters. The model combines the Current-Voltage relationship for a Heterojunction Bipolar Transistor (HBT) and the Current-Voltage relationship for a Resonant Tunnelling Diode (RTD). The thermionic emission effects along the structure, across the RTD's barriers and across the HBT's heterojunction are taken into account. The HBT model is based on the extended Gummel and Poon model of Parikh and Lindholm which takes into account the current flow across the emitter-base and the base-collector heterojunctions. The RTD is modelled in the coherent tunnelling regime and incorporates thermionic effect regime. Model results are presented for a 3 /spl mu/m/spl times/3 /spl mu/m device published in the literature-an InGaAs/AlAs on InP resonant tunnelling heterojunction bipolar transistors.
提出了一种具有双势垒结构的谐振隧道双极晶体管(RTBT)的大信号模型。这些器件在共发射极晶体管配置中显示出较大的集电极电流峰谷比(PVR),因为谐振之外的电流增益显著降低。这种大型PVR使它们成为电路应用的有吸引力的设备,包括高速模数转换器。该模型结合了异质结双极晶体管(HBT)的电流-电压关系和谐振隧道二极管(RTD)的电流-电压关系。考虑了沿结构、穿过RTD势垒和穿过HBT异质结的热离子发射效应。HBT模型基于Parikh和Lindholm的扩展Gummel和Poon模型,该模型考虑了穿过发射极-基极和基极-集电极异质结的电流。在相干隧穿机制下建立了RTD模型,并纳入了热离子效应机制。本文给出了文献中已发表的3 /spl mu/m/ 3 /spl倍/3 /spl mu/m器件——基于InP谐振隧道异质结双极晶体管的InGaAs/AlAs的模型结果。
{"title":"Large-signal model for a resonant heterojunction tunnelling transistor RTD(n)-p-n","authors":"M. Wintrebert-Fouquet, D. Skellern","doi":"10.1109/COMMAD.1998.791653","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791653","url":null,"abstract":"A large-signal model is presented for a Resonant Tunnelling Bipolar Transistor (RTBT) with a double barrier structure at the Emitter. These devices show large collector current peak-to-valley ratios (PVR) in the common-emitter transistor configuration because of significant current gain reduction beyond resonance. This large PVR makes them attractive devices for circuit applications, including high speed analog-to-digital converters. The model combines the Current-Voltage relationship for a Heterojunction Bipolar Transistor (HBT) and the Current-Voltage relationship for a Resonant Tunnelling Diode (RTD). The thermionic emission effects along the structure, across the RTD's barriers and across the HBT's heterojunction are taken into account. The HBT model is based on the extended Gummel and Poon model of Parikh and Lindholm which takes into account the current flow across the emitter-base and the base-collector heterojunctions. The RTD is modelled in the coherent tunnelling regime and incorporates thermionic effect regime. Model results are presented for a 3 /spl mu/m/spl times/3 /spl mu/m device published in the literature-an InGaAs/AlAs on InP resonant tunnelling heterojunction bipolar transistors.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117174128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unstressed nickel chromium thin films for thermo-optic application 热光学用无应力镍铬薄膜
D. Di Mola, L. Brioschi, A. Carrera, F. Fusari, M. Lenzi, G. Ongaro
The sputtering deposition technique has been used to realize nickel chromium thin films up to 12000 /spl Aring/ thick. The radio frequency biasing of the silica substrate has been implemented to control the film stress. Application of these films used as "heater electrodes" in thermo-optical devices has been reported.
采用溅射沉积技术可实现12000 /spl /厚的镍铬薄膜。采用射频偏置的方法来控制薄膜应力。这些薄膜作为“加热电极”在热光学器件中的应用已被报道。
{"title":"Unstressed nickel chromium thin films for thermo-optic application","authors":"D. Di Mola, L. Brioschi, A. Carrera, F. Fusari, M. Lenzi, G. Ongaro","doi":"10.1109/COMMAD.1998.791676","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791676","url":null,"abstract":"The sputtering deposition technique has been used to realize nickel chromium thin films up to 12000 /spl Aring/ thick. The radio frequency biasing of the silica substrate has been implemented to control the film stress. Application of these films used as \"heater electrodes\" in thermo-optical devices has been reported.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"248 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121129804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices 混合InGaAs/GaAs和InGaAs/AlGaAs量子阱器件频率响应增强的可能性
L. Dao, M. Johnston, M. Gal, L. Fu, H. Tan, C. Jagadish
Photoluminescence up conversion study of the intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum wells showed that the capture of photo-excited carriers into the intermixed quantum wells is faster (25 ps) than capture into the non-intermixed quantum wells (45 ps). The reasons for this significant reduction in the capture time is related to modification of the shape of the intermixed quantum wells.
对混合InGaAs/GaAs和InGaAs/AlGaAs量子阱的光致发光转换研究表明,光激发载流子进入混合量子阱的捕获速度(25 ps)比进入非混合量子阱的捕获速度(45 ps)快。捕获时间显著缩短的原因与混合量子阱形状的改变有关。
{"title":"Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices","authors":"L. Dao, M. Johnston, M. Gal, L. Fu, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.1998.791660","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791660","url":null,"abstract":"Photoluminescence up conversion study of the intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum wells showed that the capture of photo-excited carriers into the intermixed quantum wells is faster (25 ps) than capture into the non-intermixed quantum wells (45 ps). The reasons for this significant reduction in the capture time is related to modification of the shape of the intermixed quantum wells.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"5 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126130165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The temperature dependent fractal dimension of magneto-conductance fluctuations in semiconductor billiards 半导体台球中磁导波动的分形维数随温度的变化
A. Micolich, R. P. Taylor, R. Newbury, J. Bird, Y. Aoyagi, T. Sugano
We present a study of fractal behaviour in the magneto-conductance fluctuations of semiconductor billiards as function of temperature. Non-zero temperatures introduce a finite phase coherence time and we find that this does not suppress fractal behaviour in the experimental data. Instead we show that the fractal dimension decreases with increasing temperature and present a remarkable similarity between the fractal dimension and the phase coherence time.
我们研究了半导体台球的磁导波动随温度变化的分形行为。非零度温度引入了有限的相位相干时间,我们发现这并不能抑制实验数据中的分形行为。相反,我们发现分形维数随着温度的升高而降低,并且分形维数与相相干时间之间存在显著的相似性。
{"title":"The temperature dependent fractal dimension of magneto-conductance fluctuations in semiconductor billiards","authors":"A. Micolich, R. P. Taylor, R. Newbury, J. Bird, Y. Aoyagi, T. Sugano","doi":"10.1109/COMMAD.1998.791692","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791692","url":null,"abstract":"We present a study of fractal behaviour in the magneto-conductance fluctuations of semiconductor billiards as function of temperature. Non-zero temperatures introduce a finite phase coherence time and we find that this does not suppress fractal behaviour in the experimental data. Instead we show that the fractal dimension decreases with increasing temperature and present a remarkable similarity between the fractal dimension and the phase coherence time.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"23 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122396727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
W/sup +6//W/sup +5/ redox reactions at the interface of the nanocrystalline TiO/sub 2/ photoactive electrode W/sup +6//W/sup +5/ /纳米晶tio2 /sub /光活性电极界面氧化还原反应
Yongxiang Li, J. Hagen, D. Haarer
Photocurrent of nanocrystalline TiO/sub 2/ thin films has been probed by using a steady-state photoconduction technique. A broad single peak (280-410 nm) photocurrent spectrum was observed for the TiO/sub 2/ thin films. The photocurrent maximum at about 360 nm associates with the direct band gap of anatase TiO/sub 2/. The electron-hole pair formation that occurs at the interface between semiconductor TiO/sub 2/ nanoparticles and a solution upon absorption of near UV light leads to redox reactions of solution species (W/sup +6//W/sup +5/). The mechanism of such photodriven processes are discussed along with the potential applications in photoelectrochemical cells and as particulate photochromic systems.
采用稳态光导技术对纳米tio2 /sub /薄膜的光电流进行了探测。tio2 /sub - 2/薄膜具有较宽的单峰(280 ~ 410 nm)光电流谱。在360 nm处光电流最大值与锐钛矿的直接带隙有关。在近紫外光的吸收下,半导体tio2 /sub - 2/纳米粒子与溶液的界面处形成电子-空穴对,导致溶液(W/sup +6//W/sup +5/)发生氧化还原反应。讨论了这种光驱动过程的机理以及在光电化学电池和微粒光致变色系统中的潜在应用。
{"title":"W/sup +6//W/sup +5/ redox reactions at the interface of the nanocrystalline TiO/sub 2/ photoactive electrode","authors":"Yongxiang Li, J. Hagen, D. Haarer","doi":"10.1109/COMMAD.1998.791685","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791685","url":null,"abstract":"Photocurrent of nanocrystalline TiO/sub 2/ thin films has been probed by using a steady-state photoconduction technique. A broad single peak (280-410 nm) photocurrent spectrum was observed for the TiO/sub 2/ thin films. The photocurrent maximum at about 360 nm associates with the direct band gap of anatase TiO/sub 2/. The electron-hole pair formation that occurs at the interface between semiconductor TiO/sub 2/ nanoparticles and a solution upon absorption of near UV light leads to redox reactions of solution species (W/sup +6//W/sup +5/). The mechanism of such photodriven processes are discussed along with the potential applications in photoelectrochemical cells and as particulate photochromic systems.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117101680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires 超低无序量子点接触和量子线中的相关电子现象
D. Reilly, G. R. Facer, A. Dzurak, B. E. Kane, R. G. Clark, N. Lumpkin, L. Pfeiffer, K. West
The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantisation, however, below 2e/sup 2//h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.
一维输运中电子相互作用效应的研究需要具有超低无序度的异质结构。我们开发了一种新的GaAs/AlGaAs结构,通过使用外延生长栅极来产生增强模式场效应管,避免了传统表面HEMT器件中存在的随机杂质势。我们的量子点接触(qpc)表现出几乎理想的电导量子化,然而,在2e/sup 2//h以下观察到额外的结构。这种结构也出现在由超高迁移率表面门控hemt制成的qpc中,并被解释为自旋相关态的证据。在我们的量子线器件中,这种额外的结构进一步增强,表明1D区域的有效长度可能是决定相关强度的重要因素。
{"title":"Correlated electron phenomena in ultra-low-disorder quantum point contacts and quantum wires","authors":"D. Reilly, G. R. Facer, A. Dzurak, B. E. Kane, R. G. Clark, N. Lumpkin, L. Pfeiffer, K. West","doi":"10.1109/COMMAD.1998.791696","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791696","url":null,"abstract":"The study of electron interaction effects in one dimensional transport requires heterostructures with ultra-low disorder. We have developed a novel GaAs/AlGaAs structure which avoids the random impurity potential present in conventional surface-gated HEMT devices by using epitaxially grown gates to produce an enhancement mode FET. Our quantum point contacts (QPCs) exhibit almost ideal conductance quantisation, however, below 2e/sup 2//h additional structure is observed. Such structure has also been seen in QPCs fabricated from ultra-high-mobility surface gated HEMTs and has been interpreted as evidence for a spin-correlated state. In our quantum wire devices this additional structure is further enhanced, indicating that the effective length of the 1D region may be a significant factor in determining the strength of correlation.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129009240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Size and density control of MOCVD grown self-organised GaSb islands on GaAs MOCVD在GaAs上生长自组织GaSb岛的尺寸和密度控制
Motlan, E. Goldys, K. Drozdowicz-Tomsia, T. Tansley
We examine the morphology of ultrathin GaSb layers grown by atmospheric pressure chemical vapour deposition on GaAs substrates. Atomic force microscopy is used as a primary characterisation tool. Growth experiments are carried out with V/III ratio and temperature optimised for growth of high quality GaSb. The effects of dilution rates of metalorganic precursors in hydrogen, and pulse growth durations are investigated as a means of controlling growth rate. Dilution rates used are up to forty times higher than those used for standard bulk growth, to enable longer and better controlled island growth. We have found the critical control parameters to be the dilution rate/deposition time ratio and the product of the same quantities. Minimum dimensions reproducibly obtained are about 100/spl times/80 nm at an island thickness of 5 nm, with densities controllable between 1 to 10/spl times/10/sup 13/ m/sup -2/. We relate these findings to the present theories of self-organised island growth and mention their relevance to composite structures for electronic and optoelectronic applications.
我们研究了常压化学气相沉积在GaAs衬底上生长的超薄GaSb层的形貌。原子力显微镜被用作主要的表征工具。通过优化V/III比和生长温度,进行了高品质GaSb的生长试验。研究了金属有机前驱体在氢中的稀释率和脉冲生长时间作为控制生长速率的手段。使用的稀释率比用于标准散装生长的稀释率高出40倍,以实现更长时间和更好地控制岛生长。我们发现关键的控制参数是稀释率/沉积时间比和相同数量的产物。在孤岛厚度为5 nm时,可重复获得的最小尺寸约为100/spl倍/80 nm,密度可控制在1至10/spl倍/10/sup 13/ m/sup -2/之间。我们将这些发现与目前的自组织岛生长理论联系起来,并提到它们与电子和光电子应用的复合结构的相关性。
{"title":"Size and density control of MOCVD grown self-organised GaSb islands on GaAs","authors":"Motlan, E. Goldys, K. Drozdowicz-Tomsia, T. Tansley","doi":"10.1109/COMMAD.1998.791689","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791689","url":null,"abstract":"We examine the morphology of ultrathin GaSb layers grown by atmospheric pressure chemical vapour deposition on GaAs substrates. Atomic force microscopy is used as a primary characterisation tool. Growth experiments are carried out with V/III ratio and temperature optimised for growth of high quality GaSb. The effects of dilution rates of metalorganic precursors in hydrogen, and pulse growth durations are investigated as a means of controlling growth rate. Dilution rates used are up to forty times higher than those used for standard bulk growth, to enable longer and better controlled island growth. We have found the critical control parameters to be the dilution rate/deposition time ratio and the product of the same quantities. Minimum dimensions reproducibly obtained are about 100/spl times/80 nm at an island thickness of 5 nm, with densities controllable between 1 to 10/spl times/10/sup 13/ m/sup -2/. We relate these findings to the present theories of self-organised island growth and mention their relevance to composite structures for electronic and optoelectronic applications.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123649998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth and properties of GaSb and Al/sub x/Ga/sub 1-x/Sb layers by MOCVD MOCVD制备GaSb和Al/sub x/Ga/sub 1-x/Sb层及其性能
A. H. Ramelan, K. Drozdowicz-Tomsia, T. Tansley
A study of structural, electrical and optical properties of GaSb and Al/sub x/Ga/sub 1-x/Sb (0.05/spl les/x/spl les/0.25) grown by metalorganic chemical vapour deposition on GaAs, GaSb and Ge substrates using TMAl, TMGa, and TMSb is reported. The optimum growth window established for GaSb growth (temperature 540/spl deg/C and V/III=0.72) is significantly different from optimal growth parameters for AlGaSb layers. Higher V/III ratios and higher temperatures are required to protect the surface morphology of AlGaSb. All Al/sub x/Ga/sub 1-x/Sb in the investigated composition range 0.05/spl les/x/spl les/0.25 were grown at 580/spl deg/C and 800/spl deg/C and V/III ratio=3 and are characterized by excellent, smooth morphology, very high optical transmission and electrical parameters comparable with the best reported for this type of layer.
本文研究了金属有机化学气相沉积在GaAs、GaSb和Ge衬底上的Al/sub x/Ga/sub 1-x/Sb (0.05/spl les/x/spl les/0.25)和Al/sub x/Ga/sub 1-x/Sb (0.05/spl les/x/spl les/0.25)的结构、电学和光学性质。GaSb生长的最佳生长窗口(温度540/spl℃,V/III=0.72)与GaSb层的最佳生长参数存在显著差异。需要较高的V/III比和较高的温度来保护AlGaSb的表面形态。在0.05/spl les/x/spl les/0.25的组成范围内,Al/sub x/Ga/sub 1-x/Sb均在580/spl°/C和800/spl°/C条件下生长,V/III比=3,具有优异的光滑形貌,高的光透射率和电学参数可与该类型的最佳材料相媲美。
{"title":"Growth and properties of GaSb and Al/sub x/Ga/sub 1-x/Sb layers by MOCVD","authors":"A. H. Ramelan, K. Drozdowicz-Tomsia, T. Tansley","doi":"10.1109/COMMAD.1998.791690","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791690","url":null,"abstract":"A study of structural, electrical and optical properties of GaSb and Al/sub x/Ga/sub 1-x/Sb (0.05/spl les/x/spl les/0.25) grown by metalorganic chemical vapour deposition on GaAs, GaSb and Ge substrates using TMAl, TMGa, and TMSb is reported. The optimum growth window established for GaSb growth (temperature 540/spl deg/C and V/III=0.72) is significantly different from optimal growth parameters for AlGaSb layers. Higher V/III ratios and higher temperatures are required to protect the surface morphology of AlGaSb. All Al/sub x/Ga/sub 1-x/Sb in the investigated composition range 0.05/spl les/x/spl les/0.25 were grown at 580/spl deg/C and 800/spl deg/C and V/III ratio=3 and are characterized by excellent, smooth morphology, very high optical transmission and electrical parameters comparable with the best reported for this type of layer.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123670480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaP/GaAs resonant-tunneling transistor (RTT) InGaP/GaAs谐振隧道晶体管(RTT)
W. Liu, Y. Shie, W. Chang, S. Feng, K. Yu, J. Yan
In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (/spl Delta/E/sub V/) at the InGaP/GaAs heterointerface, a high current gain (/spl beta//sub max//spl sime/220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of the current-voltage characteristics at room temperature.
本文制作并演示了一种新型InGaP/GaAs超晶格发射极谐振隧道双极晶体管(SE-RTBT)。使用5周期InGaP/GaAs超晶格服务于RT路线和少数载流子的约束势垒。由于InGaP/GaAs异质界面处存在较大的价带不连续(/spl Delta/E/sub V/),获得了较高的电流增益(/spl beta//sub max//spl sime/220)。此外,在室温下电流-电压特性的饱和区和正向有源区都发现了由RT效应引起的n形负微分电阻(NDR)现象。
{"title":"InGaP/GaAs resonant-tunneling transistor (RTT)","authors":"W. Liu, Y. Shie, W. Chang, S. Feng, K. Yu, J. Yan","doi":"10.1109/COMMAD.1998.791630","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791630","url":null,"abstract":"In this letter, a new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) is fabricated and demonstrated. A 5-period InGaP/GaAs superlattice is used to serve the RT route and the confinement barrier for minority carriers. Due to the large valence band discontinuity (/spl Delta/E/sub V/) at the InGaP/GaAs heterointerface, a high current gain (/spl beta//sub max//spl sime/220) is obtained. Furthermore, the interesting N-shaped negative-differential-resistance (NDR) phenomena resulting from RT effect are found both in the saturation and forward-active region of the current-voltage characteristics at room temperature.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114219563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
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