100 GHz push-push oscillator in 90 nm CMOS technology

T. Karttaavi, J. Holmberg
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引用次数: 2

Abstract

A 100 GHz fixed-tuned oscillator was designed and fabricated using a 90 nm bulk CMOS process. Push-push mode was chosen to improve the power output. The oscillator exhibits -3 dBm output power at 101 GHz with 27 mW power consumption. The measured SSB phase noise is -85 dBc/Hz at 1 MHz offset Resonators are implemented with transmission lines to avoid the need of high quality capacitors and inductors.
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采用90纳米CMOS技术的100 GHz推推振荡器
采用90 nm的块体CMOS工艺设计并制作了100 GHz固定调谐振荡器。为提高功率输出,选择推-推模式。该振荡器在101 GHz时输出功率为-3 dBm,功耗为27 mW。在1 MHz偏置时,测量到的SSB相位噪声为-85 dBc/Hz,谐振器采用传输线实现,避免了对高质量电容器和电感的需求。
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