An Ultra-Low-Power Tunable Bump Circuit using Source-Degenerated Differential Transconductor

Yixuan He, Minsu Choi, Kyung Ki Kim, Yong-Bin Kim
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Abstract

In this paper, we proposed a nano-power tunable bump circuit. It incorporates a novel source-degenerated transconductor using pseudo-resistor as source resistor to control the width of the bump. The presented circuit is simulated in Cadence using 180nm CMOS process under 1.8V power supply. The results show that the transconductance is tuned with pseudo-resistor and the bump circuit can operate with wide voltage range from 0.3V to 1.8V. Also, this circuit is compact and only dissipates 16.7nW power which makes it perfect for large-scale machine learning applications such as classifier and support vector machine.
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一种超低功耗可调凹凸电路
本文提出了一种纳米功率可调凹凸电路。它采用了一种新颖的源简并变换器,利用伪电阻作为源电阻来控制凸起的宽度。该电路采用180nm CMOS工艺,在1.8V电源下在Cadence上进行了仿真。结果表明,采用伪电阻器对跨导进行了调谐,碰撞电路可以在0.3V ~ 1.8V的宽电压范围内工作。此外,该电路结构紧凑,功耗仅为16.7nW,非常适合分类器和支持向量机等大规模机器学习应用。
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