{"title":"Broad-band electromagnetic radiation damage in GaAs MESFETs","authors":"J. McAdoo, W. M. Bollen, W. Catoe, R. Kaul","doi":"10.1109/MCS.1992.186036","DOIUrl":null,"url":null,"abstract":"A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"54 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A failure mechanism was observed for SiN/sub 2/-passivated metal-semiconductor field-effect-transistor (MESFET) devices exposed to fast-risetime DC video pulses. The intensity of the pulses was about 33% of the value required to cause single-pulse failure. The failure mechanism, which degrades performance by surface flashover and erosion of the passivation layer, eventually leads to sputtering of the gate-source metallization. The results were observed by using a combination of optical, electron, and X-ray micrographs, plus MESFET terminal parameters.<>
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