A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipation. The amplifier exhibited 0.25-dB flatness from 11.4 to 12.4 GHz using less than 150 mW to deliver 25-dB gain.<>
{"title":"Ultra-flat low-power process insensitive Ku-band HEMT feedback MMIC","authors":"D. Helms, M.J. Fithian","doi":"10.1109/MCS.1992.185986","DOIUrl":"https://doi.org/10.1109/MCS.1992.185986","url":null,"abstract":"A three-stage Ku-band monolithic microwave integrated circuit (MMIC) amplifier using feedback design and 0.25- mu m-gate-length single-heterojunction high-electron-mobility-transistor (HEMT) devices has demonstrated improved process insensitivity with state-of-the-art gain flatness and power dissipation. The amplifier exhibited 0.25-dB flatness from 11.4 to 12.4 GHz using less than 150 mW to deliver 25-dB gain.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124762249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Sakuno, T. Yoshimasu, N. Matsumoto, T. Tsukao, Y. Nakagawa, E. Suematsu, T. Tomita
A miniature low-current GaAs monolithic microwave integrated circuit (MMIC) downconverter with a novel image rejection filter was developed for commercial Ku-band broadcast satellite receivers. The low-noise RF amplifier, image rejection filter mixer, and intermediate-frequency amplifier were integrated on this MMIC. This MMIC used 0.3- mu m-gate ion-implanted GaAs MESFETs. The individual circuit designs and performance are described. The current consumption of the MMIC downconverter was only 40 mA. The chip size of the MMIC downconverter with the image rejection filter was 1.7 mm*2.05 mm.<>
{"title":"A miniature low current GaAs MMIC downconverter for Ku-band broadcast satellite applications","authors":"K. Sakuno, T. Yoshimasu, N. Matsumoto, T. Tsukao, Y. Nakagawa, E. Suematsu, T. Tomita","doi":"10.1109/MCS.1992.186009","DOIUrl":"https://doi.org/10.1109/MCS.1992.186009","url":null,"abstract":"A miniature low-current GaAs monolithic microwave integrated circuit (MMIC) downconverter with a novel image rejection filter was developed for commercial Ku-band broadcast satellite receivers. The low-noise RF amplifier, image rejection filter mixer, and intermediate-frequency amplifier were integrated on this MMIC. This MMIC used 0.3- mu m-gate ion-implanted GaAs MESFETs. The individual circuit designs and performance are described. The current consumption of the MMIC downconverter was only 40 mA. The chip size of the MMIC downconverter with the image rejection filter was 1.7 mm*2.05 mm.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124819960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Sekiguchi, N. Shiga, S. Nakajima, K. Otobe, N. Kuwata, K. Matsuzaki, H. Hayashi
A compact low-noise-block (LNB) downconverter module for use in direct broadcast satellite (DBS) reception utilizing only GaAs monolithic microwave integrated circuits (MMICs) has been successfully demonstrated. Four kinds of MMICs designed with 0.5- mu m-gate pulse-doped MESFETs were assembled in a miniaturized flat package (24.5 mm*17.8 mm*6.0 mm). 52-dB conversion gain and a 2.1-dB noise figure were obtained using no discrete high-electron-mobility transistors (HEMTs) in the preceding stage and no stub-tuning.<>
{"title":"Ultra small sized low noise block downconverter module","authors":"T. Sekiguchi, N. Shiga, S. Nakajima, K. Otobe, N. Kuwata, K. Matsuzaki, H. Hayashi","doi":"10.1109/MCS.1992.186024","DOIUrl":"https://doi.org/10.1109/MCS.1992.186024","url":null,"abstract":"A compact low-noise-block (LNB) downconverter module for use in direct broadcast satellite (DBS) reception utilizing only GaAs monolithic microwave integrated circuits (MMICs) has been successfully demonstrated. Four kinds of MMICs designed with 0.5- mu m-gate pulse-doped MESFETs were assembled in a miniaturized flat package (24.5 mm*17.8 mm*6.0 mm). 52-dB conversion gain and a 2.1-dB noise figure were obtained using no discrete high-electron-mobility transistors (HEMTs) in the preceding stage and no stub-tuning.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124546511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. B. Cole, R. Pavio, Y. Tajima, C. Drubin, R. Gingras, D. Masse, J. Wolverton
Describes a new application of monolithic microwave integrated circuits (MMICs), summing and difference amplifiers, and their integration into a microwave monolithic monopulse comparator for use in monopulse radars. A GaAs monolithic monopulse comparator operating at L-band has been developed. The complete circuit was composed of four summing amplifiers and four difference amplifiers. The circuit had a gain of 8.5 dB and null depths of approximately 25 dB to 30 dB, and it was biased from a single positive supply.<>
{"title":"A monolithic monopulse comparator","authors":"J. B. Cole, R. Pavio, Y. Tajima, C. Drubin, R. Gingras, D. Masse, J. Wolverton","doi":"10.1109/MCS.1992.186011","DOIUrl":"https://doi.org/10.1109/MCS.1992.186011","url":null,"abstract":"Describes a new application of monolithic microwave integrated circuits (MMICs), summing and difference amplifiers, and their integration into a microwave monolithic monopulse comparator for use in monopulse radars. A GaAs monolithic monopulse comparator operating at L-band has been developed. The complete circuit was composed of four summing amplifiers and four difference amplifiers. The circuit had a gain of 8.5 dB and null depths of approximately 25 dB to 30 dB, and it was biased from a single positive supply.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129917353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Very small, multilayer monolithic microwave integrated circuit (MMIC) couplers are proposed. Novel methods for size reduction, i.e., a quasi-lumped elements approach and a newly developed multilayer coupled-line structure, are also described. A 24-26-GHz-band branch-line coupler and a 20-30-GHz-band broadside coupler were implemented in very small areas of less than 0.4 mm*0.4 mm and 0.2 mm*0.2 mm, respectively. Both couplers used a meanderlike thin-film microstrip line configuration to achieve a drastic size reduction.<>
{"title":"Multilayer MMIC branch-line coupler and broad-side coupler","authors":"I. Toyoda, T. Hirota, T. Hiraoka, T. Tokumitsu","doi":"10.1109/MCS.1992.186003","DOIUrl":"https://doi.org/10.1109/MCS.1992.186003","url":null,"abstract":"Very small, multilayer monolithic microwave integrated circuit (MMIC) couplers are proposed. Novel methods for size reduction, i.e., a quasi-lumped elements approach and a newly developed multilayer coupled-line structure, are also described. A 24-26-GHz-band branch-line coupler and a 20-30-GHz-band broadside coupler were implemented in very small areas of less than 0.4 mm*0.4 mm and 0.2 mm*0.2 mm, respectively. Both couplers used a meanderlike thin-film microstrip line configuration to achieve a drastic size reduction.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130359188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hand-held radios and wireless telecommunication systems will represent in the near future a high volume market. How GaAs can become a key technology for this application and how to leverage the expertise that can be obtained from silicon processing are discussed. The enabling factors of these emerging applications are cost, size, weight, features, and high operating frequency. GaAs and silicon process technologies are compared. The transfer of silicon process and manufacturing technology to GaAs is considered. GaAs monolithic microwave integrated circuits are discussed.<>
{"title":"MMIC consumer application and production","authors":"B.F. Cambou","doi":"10.1109/MCS.1992.185980","DOIUrl":"https://doi.org/10.1109/MCS.1992.185980","url":null,"abstract":"Hand-held radios and wireless telecommunication systems will represent in the near future a high volume market. How GaAs can become a key technology for this application and how to leverage the expertise that can be obtained from silicon processing are discussed. The enabling factors of these emerging applications are cost, size, weight, features, and high operating frequency. GaAs and silicon process technologies are compared. The transfer of silicon process and manufacturing technology to GaAs is considered. GaAs monolithic microwave integrated circuits are discussed.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122933403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Gingras, C. Drubin, B. Cole, W. Stacey, R. Pavio, J. Wolverton, K. Yngvesson, A. Cardiamenos
A novel quasi-optical millimeter-wave (MMW) monolithic monopulse receiver and its performance when integrated with a quasi-optical diplexer and antenna are described. Integration of the antenna, diplexer, and receiver forms a complete MMW radar front end. The receiver, which was fabricated on 0.025-in.-thick GaAs substrates, included four monolithic chips. The entire receiver was packaged on the planar back surface of a 1.5-in.-diameter lens. This lens, hyperhemispherical in shape, provided a dual function as a focusing lens and carrier for the monolithic receiver. The measured noise figure and conversion gain of the receiver were 8.7 dB and 19.0 dB, respectively, at 35.0 GHz.<>
{"title":"Millimeter-wave slot ring mixer array receiver technology","authors":"R. Gingras, C. Drubin, B. Cole, W. Stacey, R. Pavio, J. Wolverton, K. Yngvesson, A. Cardiamenos","doi":"10.1109/MCS.1992.186010","DOIUrl":"https://doi.org/10.1109/MCS.1992.186010","url":null,"abstract":"A novel quasi-optical millimeter-wave (MMW) monolithic monopulse receiver and its performance when integrated with a quasi-optical diplexer and antenna are described. Integration of the antenna, diplexer, and receiver forms a complete MMW radar front end. The receiver, which was fabricated on 0.025-in.-thick GaAs substrates, included four monolithic chips. The entire receiver was packaged on the planar back surface of a 1.5-in.-diameter lens. This lens, hyperhemispherical in shape, provided a dual function as a focusing lens and carrier for the monolithic receiver. The measured noise figure and conversion gain of the receiver were 8.7 dB and 19.0 dB, respectively, at 35.0 GHz.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131544108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Panelli, N. Chiang, W. Ou, R. Chan, C. Shih, Y. Pao, J. Archer
A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<>
{"title":"A 2.5 dB low noise 6 to 18 GHz HEMT MMIC amplifier","authors":"J. Panelli, N. Chiang, W. Ou, R. Chan, C. Shih, Y. Pao, J. Archer","doi":"10.1109/MCS.1992.185987","DOIUrl":"https://doi.org/10.1109/MCS.1992.185987","url":null,"abstract":"A two-stage, 6-18-GHz, 15.0-dB-gain monolithic GaAs high-electron-mobility-transistor (HEMT) low-noise amplifier (LNA) was designed, fabricated, and tested. A typical noise figure of 2.5 dB and output power of 5 dBm were measured. This MMIC amplifier exhibited excellent performance at a DC power consumption of 2 V and 20 mA. This performance was achieved using a production 0.25- mu m standard HEMT technology without mushroom gates. Low DC power consumption, a low noise figure, and high gain make this device well suited for front-end receiver applications.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128033343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Simon, S. Chu, R. Wolhert, M. Schindler, J. B. Cole
A millimeter-wave monolithic two-stage matrix distributed amplifier with greater than 11-dB gain from 16 to 38 GHz has been demonstrated. The two-stage matrix amplifier described here extends the matrix amplifier to millimeter-wave frequencies. The matrix amplifier topology yields a compact circuit with higher gain per unit area than a conventional distributed amplifier.<>
{"title":"A millimeter-wave monolithic matrix distributed amplifier","authors":"K. Simon, S. Chu, R. Wolhert, M. Schindler, J. B. Cole","doi":"10.1109/MCS.1992.186001","DOIUrl":"https://doi.org/10.1109/MCS.1992.186001","url":null,"abstract":"A millimeter-wave monolithic two-stage matrix distributed amplifier with greater than 11-dB gain from 16 to 38 GHz has been demonstrated. The two-stage matrix amplifier described here extends the matrix amplifier to millimeter-wave frequencies. The matrix amplifier topology yields a compact circuit with higher gain per unit area than a conventional distributed amplifier.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131136222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The author discusses some of the past examples of technology transfer for consumer electronics. Historical cases are presented for investigating the key issues in transferring high-frequency technology to mass production for consumer applications. Examples of successful technology transfer of high-frequency devices at the Sony Corporation are used to illustrate these issues. The author's opinion regarding the future of high-frequency devices in consumer electronics is also presented.<>
{"title":"Technology transfer of high frequency devices for consumer electronics; concerns and expectations","authors":"S. Watanabe","doi":"10.1109/MCS.1992.185981","DOIUrl":"https://doi.org/10.1109/MCS.1992.185981","url":null,"abstract":"The author discusses some of the past examples of technology transfer for consumer electronics. Historical cases are presented for investigating the key issues in transferring high-frequency technology to mass production for consumer applications. Examples of successful technology transfer of high-frequency devices at the Sony Corporation are used to illustrate these issues. The author's opinion regarding the future of high-frequency devices in consumer electronics is also presented.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128305158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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