{"title":"Monolithic L-band amplifiers operating at milliwatt and sub-milliwatt DC power consumptions","authors":"K. Cioffi, Rockwell","doi":"10.1109/MCS.1992.185984","DOIUrl":null,"url":null,"abstract":"Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33
Abstract
Monolithic L-band low-noise amplifiers (LNAs) operating at milliwatt and sub-milliwatt DC power consumptions were designed and fabricated. A maximum gain/power quotient of 19.1 dB/mW was recorded at a frequency of 1.25 GHz with a cascade of two monolithic microwave integrated circuit (MMIC) amplifiers yielding a total gain of 15.3 dB on a total power consumption of just 800 mu W. This is believed to be the highest gain/power quotient ever reported for a monolithic circuit at L-band. The ultralow power consumptions were obtained with a standard foundry process using an enhancement-mode MESFET with a variety of design techniques. Yields obtained on two 4-in GaAs wafers were 96-100%.<>
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