K. Huet, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, P. Dollfus, G. Ghibaudo, M. Mouis
{"title":"Monte Carlo study of apparent mobility reduction in nano-MOSFETs","authors":"K. Huet, J. Saint-Martin, A. Bournel, S. Galdin-Retailleau, P. Dollfus, G. Ghibaudo, M. Mouis","doi":"10.1109/ESSDERC.2007.4430958","DOIUrl":null,"url":null,"abstract":"The concept of mobility, resulting from an analysis of stationary transport where carrier velocity is limited by scattering phenomena, has been widely used till today in microelectronics as a measurable factor of merit and as a parameter of analytical models developed to predict device performance. If scatterings are still playing a major role in decananometer MOSFET and cannot be neglected, ballistic transport in the channel takes a growing importance as the gate length of MOSFETs tends to the nanometer scale. In this context, the mobility concept may appear as highly questionable.","PeriodicalId":103959,"journal":{"name":"ESSDERC 2007 - 37th European Solid State Device Research Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSDERC 2007 - 37th European Solid State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2007.4430958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33
Abstract
The concept of mobility, resulting from an analysis of stationary transport where carrier velocity is limited by scattering phenomena, has been widely used till today in microelectronics as a measurable factor of merit and as a parameter of analytical models developed to predict device performance. If scatterings are still playing a major role in decananometer MOSFET and cannot be neglected, ballistic transport in the channel takes a growing importance as the gate length of MOSFETs tends to the nanometer scale. In this context, the mobility concept may appear as highly questionable.
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